Description: The International Conference on Silicon Carbide and Related Materials (ICSCRM) is the most important technical conference series on silicon carbide (SiC) and related materials. Started in Washington, D.C. in 1987, the conference series developed into a bi-annual global forum on SiC from its crystal growth to the reliability in application. After five conferences in the U.S., ICSCRM has been held every two years, alternating between USA, Europe, and Japan. The last three Conferences were held in Giardini Naxos, Italy (2015), Washington, D.C. , USA (2017), and Kyoto, Japan (2019). Due to the pandemic situation in 2020 and 2021, the alternating European edition, the 13th ECSCRM, has been held in 2021, and the 19th ICSCRM has been postponed to 2022. The 19th edition of ICSCRM will be the last of its kind – starting in 2023, the conference series will be united with the European edition. It will form an annual event under the well-established name ICSCRM and a new rotation schedule integrating the SiC communities worldwide.

Silicon Carbide and Advanced Materials

Edited by: Dr. Juraj Marek, Dr. Gregor Pobegen, Prof. Ulrike Grossner, Hamada Shoukry and Dr. Azher M. Abed

Online since: May 2023

Description: This special edition includes articles that reflected the results of the latest research in semiconductors for power electronics, special steel coatings, properties of shape memory alloys and building materials such as cement, concrete and materials for intumescent coatings of structural steel for fire protection. This special edition will be helpful to specialists in the electronics industry and materials science in particular in the area of building materials.

Defect and Diffusion Forum Vols. 115-116

Edited by: Dr. David J. Fisher

Online since: January 1994

Description: Journal Issue