Books by Keyword: Device

Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
The volume on Silicon Carbide and Related Materials is divided into 10 chapters ranging from “Bulk growth” to “Device and application”. The reports demonstrate the technical and scientific advances in the related areas: 150 mm 4H-SiC wafers are now commercially available, a significant improvement of the carrier lifetime (up to 35 ms) for n-type SiC epi-layers has been achieved, SiC diodes have a large market share in server and telecom power applications requiring the maximum efficiency, and a variety of 1- cm², 15 kV class bipolar devices have been demonstrated, including PN Diodes, IGBTs and GTO. In general, the number of contributions devoted to application of SiC and related materials, GaN and solid solutions based on this material, and graphene is steadily increasing compared to the 2011 edition.

Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
The peer-reviewed papers of this volume provide a comprehensive and up-to-date guide to the worldwide state-of-the art knowledge concerning Precision Engineering and Non-Traditional Machining. They cover precision mechanics design, precision and ultra-precision machining, precision testing and control, non-traditional machining, manufacturing information engineering, MEMS/NEMS, optical instrumentation and technology and materials science and technology. The volume will provide readers not only with a broad overview of the latest advances, but also with a valuable reference source.

Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
The search for ever more novel materials, to meet the ever-increasing demands of modern civilization for building, operating and maintaining its infrastructures, will continue as long as mankind seeks to conserve the Earth’s resources, and yet keep up with the new technological challenges created by the latest inventions and discoveries.