Books by Keyword: Dislocation Density

Description: This periodical edition includes peer-reviewed scientific and engineering papers on all aspects of research in the area of nanoscience and nanotechnologies and wide practical application of the achieved results.

Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
The peer review papers of this volume on “Materials Science and Technology” are grouped as follows:
Chapter 1: Advanced Ceramic Materials;
Chapter 2: Biomedical Materials and Devices,
Chapter 3: Materials for Energy and Environment;
Chapter 4: Material Reliability;
Chapter 5: Metals, Alloys and Intermetallic Compounds;
Chapter 6: Polymer-based Materials;
Chapter 7: Simulation, Design and Manufacturing.

Description: This tenth volume in the series covering the latest results in the field includes abstracts of papers which appeared between the publication of Annual Retrospective IX (Volume 265) and the end of May 2008 (journal availability permitting). As well as the 452 metals abstracts, the issue includes – in line with the new editorial policy of including original papers on all of the major material groups: “Defect Investigation of Plastically Deformed Al 5454 Wrought Alloy Using PADBS and Electrical Measurements” (Abdel-Rahman, Kamel, Lotfy, Badawi and Abdel-Rahman), “Activation Enthalpy of Dislocation Migration in Aircraft (Aerospace) (2024) Alloy by Positron Spectroscopy” (Abdel-Rahman, Abdallah, Hassan and Badawi), “Effect of Irradiation Dose on AlCu6.5 Alloy using Positron Annihilation Doppler Broadening Technique” (Abdel-Rahman, Lotfy, Abdel-Rahman and Badawi), “Dependence of Mono-Vacancy Formation Energy on the Parameter of Ashcroft's Potential” (Ghorai), “X-Ray Characterization of Ag Impurities in Na1-xAgxCl” (Hazeen, Syed Ali, Prema Rani and Saravanan), “Self-Organization Behavior of Sub-Micron CdO Grains Grown during Vapour-Solid Transition” (Zhang, Wang and Li), “Studies of the Local Structure and the Spin Hamiltonian Parameters for Co2+ in CaTiO3” (Lu, Wu, Zhang and Wei).

Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
The series, “Hungarian Conference and Exhibition on Materials Science, Testing and Informatics”, was founded in order to provide a forum in which Hungarian and foreign scientists and research groups - interested in metals and alloys, silicates, polymers and composites - would have the opportunity to exchange and publish ideas and to establish new integrated partnerships. The 4th Hungarian Conference and Exhibition on Materials Science, Testing and Informatics was held on the Balaton lakeside, at Balatonfüred, October 12-14th , 2003.

Description: This group of materials tends to be relatively neglected, with regard to defect and diffusion studies, when compared with the other major semiconductor groups such as the elementals (Si, Ge) and the III-V compounds (especially GaAs). This is reflected by the fact that the volume of diffusion data is smaller than that for the other groups (see DDF volumes 153-155 on Si and volumes 157-159 on GaAs). Nevertheless MCT (HgCdTe), here classified as part of the (Cd,Hg)Te system, continues to be of great interest and this is reflected by the contents of this volume. In particular, the first of the original works in this book reviews the topic of diffusion in MCT.

Description: Journal issue