Engineering Research
Materials Science
Engineering Series
Books by Keyword: Electronic Properties
Books
Collection of selected, peer reviewed papers from the GADEST 2015: Gettering and Defect Engineering in Semiconductor Technology, September 20-25, 2015, Bad Staffelstein, Germany.
The 71 papers are grouped as follows: Chapter 1: Growth of Mono- and Multi-Crystalline Silicon; Chapter 2: Passivation and Defect Studies in Solar Cells; Chapter 3: Intrinsic Point Defects and Dislocations in Silicon; Chapter 4: Light Elements in Silicon-Based Materials; Chapter 5: Properties and Gettering of Transition Metals in Silicon; Chapter 6: Radiation- and Impurity-Related Defect Studies in Silicon and Germanium; Chapter 7: Thermal Properties of Semiconductors; Chapter 8: Luminescence and Optical Properties of Semiconductors; Chapter 9: Nano-Sized Layers and Structures; Chapter 10: Wide-Bandgap Semiconductors; Chapter 11: Advanced Methods and Tools for Investigation of Semiconductor Materials
In the monograph the theory of artificial atom formed from spatially separated electrons and holes (hole moving in the volume of a semiconductor (dielectric) quantum dot and an electron localized on the outer spherical interface between the quantum dot and a dielectric matrix) is developed. Predicted a new hydrogen - artificial atom, which is similar to the new alkali - metal atom. This review discusses the current state of research of artificial atoms (quasiatomic nanoheterostructures) and more complex nanostructures based on them - synthetic quasimolecules, proposed a new model of an artificial atom, satisfactorily explaining its optical and electronic properties, as well as the prospects for the development of the new scientific field.
A theory is developed for the interaction of an electromagnetic field with one-particle quantum-confined states of charge carriers in semiconductor quantum dots. In the context of dipole approximation it is established that the gigantic optical absorption cross sections in the quasi-zero-dimensional systems make it possible to use the systems as efficient absorbing materials. The effects of the resonant interaction of light with such local electron states in presence and in absence of a homogeneous magnetic field are investigated.
The electronic properties of solids have become of increasing importance in the age of information technology. The study of solids and materials, while having originated from the disciplines of physics and chemistry, has evolved independently over the past few decades. The classical treatment of solid-state physics, which emphasized classifications, theories and fundamental physical principles, is no longer able to bridge the gap between materials advances and applications. In particular, the more recent developments in device physics and technology have not necessarily been driven by new concepts in physics or new materials, but rather by the ability of engineers to control crystal structures and properties better via advances in crystal growth and patterning techniques. In many cases, new applications simply arise from the adaption of conventional ideas to interdisciplinary areas. One example is that of recent advances which rely heavily upon the availability of the sub-micron technology developed by the semiconductor industry. Another example is the emergence of nanotechnology.