Books by Keyword: Epitaxial Layer

Description: This special edition addresses the scientific and technological foundations underlying the production of silicon carbide crystals and device-quality epitaxial films. Bulk crystal growth techniques, particularly physical vapour transport, are discussed with emphasis on technological control, defect reduction, polytype stability, and process optimisation, all of which affect final device performance and reliability. The edition will serve as a valuable resource for researchers, engineers, and students working in semiconductor materials and technologies.

Description: This special edition is devoted to the identification, characterisation, and understanding of the effects of structural critical imperfections of silicon carbide during bulk crystal growth and epitaxial deposition. Emphasis is placed on advanced analytical techniques that provide essential insight into the origin, distribution, and evolution of defects, enabling continuous improvement in crystal growth processes and epitaxial technologies. The publication aims to provide researchers and engineers with a deeper understanding of defect formation and characterisation, which is fundamental to achieving the material perfection required for the creation of reliable and efficient SiC-based electronic devices.

Description: The development of solid-state semiconductor structures is at the forefront of technological innovation, driving advancements across various applications of microelectronics and high-power devices. The formation and processing of semiconductor solid-state structures involve a series of sophisticated and precision technologies that improve functionality and provide integration of finished components into complex circuits. This special edition is an essential resource for engineers and researchers involved in developing and applying semiconductor technologies.

Description: The processing and properties analysis of semiconductor structures are standing at the cutting edge of technological innovation, propelling advancements in the production of solid-state electronics. These technologies require a range of sophisticated and precise operations and are crucial in modifying materials to achieve the desired electrical characteristics of completed structures. The presented special edition will be an invaluable resource for engineers and researchers involved in the development in the area of semiconductor technologies.

Description: These papers were selected from materials of the Asia-Pacific Conference on Silicon Carbide and Related Materials (APCSCRM 2019), July 17-20, 2019, Beijing, China. The collection introduces results of scientific and engineering researches in the area of growth, analysis of structure, and properties of wide bandgap semiconductors and of wide bandgap semiconductor devices.