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Books by Keyword: Gallium Arsenide (GaAs)
Books
Edited by:
J.C. Bourgoin
Online since: January 1990
Description: The DX center is a defect present in Gallium Arsenide and related alloys when these materials are doped with n-type impurities.
Authors:
E. Lendvay
Online since: January 1987
Description: Gallium Arsenide presents 63 important papers given at the second international conference on the Physics and Technology of GaAs and other III-V Compounds, held in Budapest, Hungary, Sept. 1986. The wealth of new information presented at the conference focussed on the following research areas:
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