Description: In addition to the usual abstracts of research reported since the previous retrospective, this issue comprises ten invited papers. The first four are reviews that cover the important topics of conductive oxide preparation, the modeling of amorphous materials (silicon carbide, for example), the nanoscale characterization of oxides and the effect of combined irradiation treatments.
The other six invited papers present recent experimental or theoretical studies of structural defects in gallium nitride, atomic-scale deformation processes in nanomaterials, micropipes in silicon carbide, radiation effects in garnets and boron diffusion in hafnia.
Volume is indexed by Thomson Reuters CPCI-S (WoS).

Defect and Diffusion Forum Vols. 136-137

Edited by: Dr. David J. Fisher

Online since: March 1996

Description: Journal issue

Advances in Crystal Growth

Edited by: A.M. Mancini, C. Paorici and M.L. Terranova

Online since: February 1996

Description: The field of crystal growth has developed steadily with the rapid progress in microelectronics. The purpose of this book is to present a survey of the most recent results related to this subject area. The book will serve as both an up-to-date review for experts and as a reference work on crystal growth for younger scientists and for those who wish to keep track of the advances and technological trends in the field.