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Diffusion Foundations and Materials Applications
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Books by Keyword: Ising Model
Books
Edited by:
Dehuai Yang
Online since: October 2013
Description: Collection of selected, peer reviewed papers from the 2013 International Conference on Mechanical Engineering, Industrial Materials and Industrial Electronics (MII 2013), September 1-2, 2013, Hong Kong.
The 64 papers are grouped as follows:
Chapter 1: Applied Materials;
Chapter 2: Mechanical Engineering;
Chapter 3: Mechatronics, Robotics, Control and Automation;
Chapter 4: Engineering Management.
The 64 papers are grouped as follows:
Chapter 1: Applied Materials;
Chapter 2: Mechanical Engineering;
Chapter 3: Mechatronics, Robotics, Control and Automation;
Chapter 4: Engineering Management.
Edited by:
K.B.R. Varma
Online since: September 2013
Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
Collection of selected, peer reviewed papers from the 2013 2nd International Conference on Metallurgy Technology and Materials (ICMTM 2013), June 25-26, 2013, Hong Kong, China.
The 108 papers are grouped as follows:
Chapter 1: Metallurgy Technologies and Materials, Manufacturing Engineering;
Chapter 2: Minerals and Mining Engineering;
Chapter 3: Advanced Materials Science and Technologies;
Chapter 4: Materials Processes Technology.
Collection of selected, peer reviewed papers from the 2013 2nd International Conference on Metallurgy Technology and Materials (ICMTM 2013), June 25-26, 2013, Hong Kong, China.
The 108 papers are grouped as follows:
Chapter 1: Metallurgy Technologies and Materials, Manufacturing Engineering;
Chapter 2: Minerals and Mining Engineering;
Chapter 3: Advanced Materials Science and Technologies;
Chapter 4: Materials Processes Technology.
Edited by:
Dr. David J. Fisher
Online since: May 1998
Description: Surface Diffusion and Surface Structure - Ten Years of Research The topic of surface diffusion continues to increase in importance, not only because of its practical importance in fields as diverse as catalysis and crystal growth/solidification, but also because this is a case in which fundamental diffusion processes can be monitored in extreme detail; even to the point of following a single migrating atom.
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