Books by Keyword: Isotope Effect

Description: This second volume in a new series covering entirely general results in the fields of defects and diffusion includes 356 abstracts of papers which appeared between the end of 2009 and the end of 2010. As well as the abstracts, the volume includes original papers on theory/simulation, semiconductors and metals: “Predicting Diffusion Coefficients from First Principles …” (Mantina, Chen & Liu), “Gouge Assessment for Pipes …” (Meliani, Pluvinage & Capelle), “Simulation of the Impact Behaviour of … Hollow Sphere Structures” (Ferrano, Speich, Rimkus, Merkel & Öchsner), “Elastic-Plastic Fracture Mechanics Model …” (Liao), “Calculation of Fracture Toughness for Hydrogen Embrittlement …” (Mahdavi & Mashhadi), “… Method to Describe the Role of Diffusion in Catalyst Design” (Zeynali), “… Axial Shift and Spin Hamiltonian Parameters for Mn2+ in CdS …” (Wang, Wu, Hu & Xu), “Structure and Electronic Properties of Evaporated Thin Films of Lead Sulfide” (Ibrahim), “Acoustic Emission during Isothermal Oxidation of … Steel” (Jha, Mishra & Ojha), “… Carbon Content versus Heating Temperature in Austenitizing of Cast Iron” (Gong & Xiang), “Exploration of Parameters of Ashcroft’s Potential …” (Ghorai), Effect of Tribological Parameters upon Mechanical Wear …” (El Azizi, Meliani, Belalia & Benamar)

Description: Modern semiconductor devices rely upon precise defect engineering. On the one hand: defects are the components needed to generate the electronic architecture of the device. On the other hand: they may – if not carefully controlled– induce failure of that device. During the past fifty years, the electrical and optical properties of defects, their generation, transport, clustering and reactions between them have been investigated intensively. Yet the development of semiconductor technology remains closely connected to the advances made in defect science and engineering. Compared to metals, defect control in silicon is significantly complicated by the open structure of its lattice. As a result, reactions between defects, even at room temperature, have become a central issue in defect engineering.

Description: This second volume in the new-format coverage of the latest results in the field covers abstracts from the approximate period of mid-1998 to mid-1999. As always, due to the vagaries of some journal publication dates, abstracts of earlier work may be included in order that the present contents merge seamlessly with those of volumes 162-163; the previous issue in this sub-series.

Description: Journal issue

Description: Defect and Diffusion Forum Vols. 95-98