Description: This is the second issue, following DDF164, to cover recent progress in this field. The contents are contiguous with those of DDF164, and extend to late November or December 1999 (depending upon journal publication dates). As usual, priority in abstracting has been given to the most accessible work and, in particular, to those papers which furnish original data or report important new techniques, phenomena or anomalies, although there is also extensive coverage of more qualitative features of diffusion and defect phenomena, and of the predictions of computer models.

Polycrystalline Semiconductors V

Edited by: J.H. Werner, H.P. Strunk, H.W. Schock

Online since: April 1999

Description: Like the previous conferences in this series, POLYSE '98 covered many aspects of polycrystalline semiconductors. Whereas earlier proceedings had included many contributions on basic research, for example on the structural properties of single grain boundaries, later proceedings had included more articles on solar cells and thin-film transistors, seemingly marking a transition to a more technology-oriented conference. However, the contributions to POLYSE '98 show that the POLYSE-series is again bringing together researchers from basic research as well as engineers working on devices.

The 84 papers cover topics such as: beam-induced currents, thin-film silicon, silicon crystallization, oxide semiconductor films, chalcogenide and spinel films, chalcopyrite films, thin-film junctions and devices; thus providing an extensive survey of the most recent results in polycrystalline semiconductor research.