Defects and Diffusion in Semiconductors XII

Defects and Diffusion in Semiconductors XII

Description:

This twelfth volume in the series covering the latest results in the field includes abstracts of papers which have appeared since the publication of Annual Retrospective XI (Volume 282). As well as the 565 semiconductor-related abstracts, the issue includes – in line with the policy of including original papers on all of the major material groups.

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Review from Ringgold Inc., ProtoView: Developments in semiconductors, metals, ceramics, and miscellaneous material over the past year are reviewed in 15 original papers. Among their topics are the non-Gaussian diffusion of phosphorus and arsenic in silicon with local density diffusivity model, the artificial aging behavior of 6063 alloy studied using Vickers hardness and positron annihilation lifetime techniques, the liquid-phase sintering of tungsten heavy alloys, new experimental proof of phase and structure formation in metallic materials eletrodeposited through a liquid state stage, the variable range hopping model in manganese oxides, and dynamics of trililoxane wetting of hydrophobic surfaces. The final 200 pages are devoted to abstracts of articles on specific materials.