Diffusion in GaAs and other III-V Semiconductors

Diffusion in GaAs and other III-V Semiconductors

Subtitle:

10 Years of Research

Description:

The inherently superior electron ballistic properties of GaAs, as compared with those of Si, have generated an ever-increasing pace of research on this semiconductor; thus making this volume a timely source of information.

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Info:

Editors:
Dr. David J. Fisher
THEMA:
TGM
BISAC:
TEC021000
Pages:
520
Year:
1998
ISBN-13 (softcover):
9783908450320
ISBN-13 (CD):
9783038599920
ISBN-13 (eBook):
9783035706765
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