During the last 25 years, the behavior of donors in III-V alloys has been the subject of a very extensive research effort. The research emphasis on AlGaAs compounds is motivated by the industrial importance of AlGaAs/GaAs heterojunction based devices. As seeing it now, "the DX center problem", the behavior of donors in III-V alloys, has shown to be unexpectedly difficult to understand. To determine the microscopic nature of the DX center is still a challenging problem.

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Info:

eBook:

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ToC:

Table of contents

Editors:

E. Muñoz Merino

DOI:

https://doi.org/10.4028/b-fpV8p7

THEMA:

TGM

BISAC:

TEC021000

Keywords:

Aluminium Gallium Arsenide, DX Centers, III-V Alloys, Photoluminescence Properties, Semiconductors

Pages:

186

Year:

1994

ISBN-13 (softcover):

9783908450030

ISBN-13 (CD):

9783038599692

ISBN-13 (eBook):

9783035706536

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