Formation of Silicon Nitride

Formation of Silicon Nitride

Subtitle:

From the 19th to the 21st Century

Description:

The elements: Si, N, O, C and H, have strong chemical affinities for one another. Under the correct conditions, Si-N bonding will occur in almost any Si-N-(O/C/H), and many related, reaction systems; although Si-O and Si-C are formidable competitors to Si-N. The most favored Si-N compound is stoichiometric Si3N4. It comes in three common varieties. How they interrelate, how one finds them and (above all ) how one makes them - and how sometimes they just happen to form - are the subjects of this book, with due attention being paid to closely related matters.

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Info:

Authors:
Raymond C. Sangster
THEMA:
TGM
BISAC:
TEC021000
Pages:
960
Year:
2005
Volume in the series:
22-24
ISBN-13 (softcover):
9780878494927
ISBN-13 (CD):
9780878491902
ISBN-13 (eBook):
9783038130420
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Review from Ringgold Inc., ProtoView: This comprehensive reference gathers information published on the chemistry of silicon nitride and its products, uses, and markets. Separate chapters overview the manufacture of silicon nitride powder, the production of silicon nitride ceramics via the reaction bonding process, the intrinsic reactions between crystalline silicon surfaces and N2 for silicon wafers, nitridation of Si-O based materials, and chemical vapor deposition of Si-H compounds. The author, who originally worked on a similar book for the Gmelin Institute, cites 4,000-plus source documents and points the researcher to relevant handbooks, papers, and review articles for further reading.