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Silicon Carbide and Related Materials 2000
Subtitle:
ECSCRM2000
Description:
Wide bandgap semiconductors such as SiC, III-V nitrides and related compounds are currently attracting more and more attention due to their very interesting physical properties, which are different from those of conventional semiconductors. Steady improvement of the crystal quality and improved knowledge of the physical properties of these materials are leading to rapid developments in high-power, high-temperature, high-frequency electronics and blue light emitters.
Volume is indexed by Thomson Reuters CPCI-S (WoS).
Volume is indexed by Thomson Reuters CPCI-S (WoS).
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eBook:
ToC:
Editors:
G. Pensl, D. Stephani and M. Hundhausen
THEMA:
TGM
BISAC:
TEC021000
Keywords:
Details:
Proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, Sept. 3-7, 2000
Pages:
860
Year:
2001
ISBN-13 (hardcover):
9780878498734
ISBN-13 (CD):
9783038598732
ISBN-13 (eBook):
9783035705577
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