Papers by Keyword: Field Emission Properties

Abstract: A simple method for fabricating lateral Si diodes with various gap widths were designed using the special properties of anisotropic TMAH wet etching and local anodic oxidation. The electrical performance of lateral diode was characterized using an HP4156c semiconductor parameter analyzer (SPA300HV, Agilent) at room temperature in a vacuum environment lower than 10^-8 Torr. The emission current from the silicon emitter cathode was measured as a function of the applied anode voltage. The effect of changing the anode-cathode gap was observed in the I-V characteristics, with a distinct reduction in the device turn-on with a decrease in the gap. For narrowed nanogaps from 55 nm to 35 nm, the turn-on voltage was decreased from 21 V to 16 V. Values of field enhancement factor β and emitting area A for different gap width were measured using Fowler-Nordheim plot. Our results indicate that β reduces and emitting area increases with increasing of gap width.

Abstract: In the present work, ZnO nanostructures with tunable size were successfully synthesized on non-seeded Cu substrates by a simple electrodeposition method. The effects of growth conditions on the morphology of the products were studied in detail by scanning electron microscopy (SEM), and transmission electron microscopy (TEM). The as-prepared products exhibited flake-like morphology when the concentration of ZnCl2 was higher enough, while the products showed flower-like morphology when the concentration was lower enough. Field emission investigation indicated that the nanoflowers exhibited good emission properties. The ZnO nanoflowers show potential application as field emitters.