Paper Titles
The Study of High Temperature Annealing of a-SiC:H Films
p.18
Microstructure and Thermal Features of a-Si:H and nc-Si:H Thin Films Produced by Rf Sputtering
p.23
Poly-Si Thin Film Transistors: Effect of Metal Thickness on Silicon Crystallization
p.28
Organic Materials for Active Layers in Transistors: Study of the Electrical Stability Properties
p.33
Structural and Optical Characterization of Light Emitting InGaN/GaN Epitaxial Layers
p.38
Effect of Oxidant/ Monomer Ratio on the Electrical Properties of Polypyrrole in Tantalum Capacitors
p.43
Electrical Imaging Map on Polycrystalline Diamond Films and Diodes and Structural Relationship Obtained by Micro-Raman
p.48
Electrical Properties of Fluorine Doped Diamond Like Carbon
p.53
Electrical Performances of Low Temperature Annealed Hafnium Oxide Deposited at Room Temperature
p.58

Structural and Optical Characterization of Light Emitting InGaN/GaN Epitaxial Layers

Article Preview

Abstract:

This paper concerns the structural and optical properties of the group III-V semiconductor alloy, indium gallium nitride (InGaN). We focus on the reasons of interest to study InGaN. Recent advances regarding the basic understanding (ex. accurate composition determination) and some yet unclear issues (ex. phase separation) regarding this material system, are also briefly discussed. Illustrative results on the light emitting and structural properties are presented.

You might also be interested in these eBooks
Advanced Materials Forum III View Preview

Info:

Periodical:

Materials Science Forum (Volumes 514-516)

Pages:

38-42

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.514-516.38

Citation:

Cite this paper

Online since:

May 2006

Authors:

Sergio Pereira, M.R. Correia, Eduardo Alves

Keywords:

Composition, InGaN, Semiconductor Alloy, Strain, X-Ray Diffraction (XRD)

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2006 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

References

[1] B. Gil, ed. Low-dimensional nitride semiconductors, Oxford University Press, Oxford (2002).

Google Scholar

[2] S. Pereira, M. R. Correia, T. Monteiro, E. Pereira, E. Alves, A. D. Sequeira, and N. Franco, Appl. Phys. Lett. 78, 2137 (2001).

DOI: 10.1063/1.1358368

Google Scholar

[3] S. Pereira, M. R. Correia, E. Pereira, K. P. O'Donnell, C. Trager-Cowan, F. Sweeney, and E. Alves, Phys. Rev. B 64, 205311 (2001).

Google Scholar

[4] S. Pereira, E. Pereira, E. Alves, N. P. Barradas, K. P. O'Donnell, C. Liu, C. J. Deatcher, and I. M. Watson, Appl. Phys. Lett. 81, 2950 (2002).

DOI: 10.1063/1.1513661

Google Scholar

[5] M. Schuster, P. O. Gervais, B. Jobst, W. Hösler, R. Averbeck, H. Riechert, A. Iberl, and R. Stömmer, J. Phys. D 32, A56 (1999).

DOI: 10.1088/0022-3727/32/10a/312

Google Scholar

[6] S. Pereira, M. R. Correia, E. Pereira, K. P. O'Donnell, E. Alves, A. D. Sequeira, and N. Franco, Appl. Phys. Lett. 79, 1432 (2001); Appl. Phys. Lett. 80, 337 (2002).

DOI: 10.1063/1.1430029

Google Scholar

[7] S. Pereira, M. R. Correia, E. Pereira, K. P. O'Donnell, E. Alves, A. D. Sequeira, N. Franco, I. M. Watson, and C. J. Deatcher, Appl. Phys. Lett. 80, 3913 (2002).

DOI: 10.1063/1.1481786

Google Scholar

[8] C. J. Deatcher, C. Liu, S. Pereira, M. Lada, A. G. Cullis, O. Brandt and I. M. Watson Semicond. Sci. Technol. 18 212 (2003).

Google Scholar

[9] K. P. O'Donnell, R. W. Martin, S. Pereira, A. Bangura, M. E. White, W. Van der Stricht and K. Jacobs, Phys. Stat. Sol. B 216, 141 (1999).

DOI: 10.1002/(sici)1521-3951(199911)216:1<141::aid-pssb141>3.0.co;2-b

Google Scholar

[10] J. Wu, W. Walukiewicz, K. M. Yu, J. W. Ager III, E. E. Hailer, H. Lu, and W. J. Schaff, Appl. Phys. Lett. 80, 4741 (2002).

Google Scholar

[11] Y. Nanishi, Y. Saito, T. Yamaguchi, M. Hori, F. Matsuda, T. Araki, A. Suzuki, T. Miyajima Phys. Stat. Sol. A 200, 202 (2003).

DOI: 10.1002/pssa.200303327

Google Scholar

[12] I. Ho and G. B. Stringfellow, Appl. Phys. Lett. 68, 2701 (1996).

Google Scholar

[13] D. Doppalapudi, S. N. Basu, K. F. Ludwig, and Jr. T. D. Moustakas, J. Appl. Phys. 84, 1389 (1998).

Google Scholar

[14] S. Pereira, M. R. Correia, E. Pereira, C. Trager-Cowan, F. Sweeney, K. P. O'Donnell, E. Alves, N. Franco, and A. D. Sequeira, Appl. Phys. Lett. 81, 1207 (2002).

DOI: 10.1063/1.1499220

Google Scholar

[15] M. R. Correia, S. Pereira, E. Pereira, J. Frandon, I. M. Watson, C. Liu, E. Alves, A. D. Sequeira, and N. Franco, Appl. Phys. Lett. 85, 2235 (2004).

DOI: 10.1063/1.1791324

Google Scholar