Paper Titles
Organic Materials for Active Layers in Transistors: Study of the Electrical Stability Properties
p.33
Structural and Optical Characterization of Light Emitting InGaN/GaN Epitaxial Layers
p.38
Effect of Oxidant/ Monomer Ratio on the Electrical Properties of Polypyrrole in Tantalum Capacitors
p.43
Electrical Imaging Map on Polycrystalline Diamond Films and Diodes and Structural Relationship Obtained by Micro-Raman
p.48
Electrical Properties of Fluorine Doped Diamond Like Carbon
p.53
Electrical Performances of Low Temperature Annealed Hafnium Oxide Deposited at Room Temperature
p.58
Role of Hydrogen Plasma on the Electrical and Optical Properties of Indium Zinc Transparent Conductive Oxide
p.63
A Study on the Electrical Properties of ZnO Based Transparent TFTs
p.68
Thermoreactivity of Sol-Gel Precursor for ZnO-Based Thin Films
p.73

Electrical Properties of Fluorine Doped Diamond Like Carbon

Article Preview

Abstract:

In this work fluorinated Diamond Like Carbon (DLC) films have been grown with different CF4 concentrations and have been studied by electrical DC measurements in a temperature range from 30 to 300 K. It was found that the samples grown with lower CF4 concentration show a small rectification, with a potential barrier lower than 0.3 V. The bulk conduction shows a trapcontrolled Space Charge Limited Current (SCLC), with characteristic trap energy between 0.08 and 0.13 eV, confirmed by the differential conductivity analysis. The activation energy (ranging from 50 to 140 meV) is also dependent on the sample fluorine concentration, decreasing with the fluorine concentration increase.

You might also be interested in these eBooks
Advanced Materials Forum III View Preview

Info:

Periodical:

Materials Science Forum (Volumes 514-516)

Pages:

53-57

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.514-516.53

Citation:

Cite this paper

Online since:

May 2006

Authors:

Simone C. Trippe, Joana Catarina Madaleno, Luiz Pereira

Keywords:

Diamond-Like Carbon (DLC), Electrical Properties, Fluorine Doping

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2006 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

References

[1] E. Ohta, Y. Kimura, H. Kondo, M. Takahashi, K. Kameyama, K. Yamada and I. Fujimura, SSDM Vol. 22 (1990) p.589.

Google Scholar

[2] A.M. Baranov, A.E. Varfolomeev, A.A. Nefedov, M. Anderle, L. Calliari, G. Speranza and N. Landini, Diam. Relat. Mater. Vol. 9 (2000) p.649.

DOI: 10.1016/s0925-9635(99)00251-4

Google Scholar

[3] G.A.J. Amaratunga, V.S. Veerasamy, C.A. Davis, W.I. Milne, D.R. McKenzie, J. Yuan and M. Weiler, J. Non-Cryst. Solids Vol. 164-166 (1993) p.1119.

DOI: 10.1016/0022-3093(93)91195-9

Google Scholar

[4] E.H. Roderick, Metal - Semiconductor Contacts, Clarendon Press (1978).

Google Scholar

[5] M.A. Lampert and P. Mark, Current Injection in Solids, Academic Press (1970).

Google Scholar

[6] P. Mark and W. Helfrich, J. Appl. Phys. Vol. 33 (1962) p.205.

Google Scholar

[7] K.C. Kao and W. Huang, Electrical Transport in Solids, Pergamon Press (1981).

Google Scholar

[8] A. Bozhko, M. Shupegin and T. Takagi, Diam. Relat. Mater. Vol. 11 (2002) p.1753.

Google Scholar

[9] P.N. Murgatroyd, J. Phys. D: Appl. Phys. Vol. 3 (1970) p.151.

Google Scholar

[10] A.N. Zyuganov and S.V. Svechnikov, Injection Contact Phenomena in Semiconductors, Naukova Dumka (1981).

Google Scholar