A Study on the Reliability and Stability of High Voltage 4H-SiC MOSFET Devices

Sumi Krishnaswami; Sei Hyung Ryu; Bradley Heath; Anant K. Agarwal; John W. Palmour; Bruce  Geil; Aivars J. Lelis; Charles Scozzie

doi:10.4028/www.scientific.net/MSF.527-529.1313

Paper Titles

The Characteristics of MOSFETs Fabricated on the Trench Sidewalls of Various Faces Using 4H-SiC (11-20) Substrates
p.1297

Fabrication of 4H-SiC p-Channel MOSFET with High Channel Mobility
p.1301

Reduction of On-Resistance in 4H-SiC Multi-RESURF MOSFETs
p.1305

Fabrication of 4H-SiC DIMOSFETs by High-Temperature (>1400°C) Rapid Thermal Oxidation and Nitridation Using Cold-Wall Oxidation Furnace
p.1309

A Study on the Reliability and Stability of High Voltage 4H-SiC MOSFET Devices
p.1313

Bias Stress-Induced Threshold-Voltage Instability of SiC MOSFETs
p.1317

Using a First Principles Coulomb Scattering Mobility Model for 4H-SiC MOSFET Device Simulation
p.1321

Optimisation of 4H-SiC MOSFET Structures for Logic Applications
p.1325

Evolution of Drift-Free, High Power 4H-SiC PiN Diodes
p.1329

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A Study on the Reliability and Stability of High Voltage 4H-SiC MOSFET Devices

Abstract:

Gate oxide reliability measurements of 4H-SiC DMOSFETs were performed using the Time Dependent Dielectric Breakdown (TDDB) technique at 175°C. The oxide lifetime is then plotted as a function of the electric field. The results show the projected oxide lifetime to be > 100 years at an operating field of ~3 MV/cm. Device reliability of 2.0 kV DMOSFETs was studied by stressing the gate with a constant gate voltage of +15 V at a temperature of 175°C, and monitoring the forward I-V characteristics and threshold voltage for device stability. Our very first measurements show very little variation between the pre-stress and post-stress conditions up to 1000 hrs of operation at 175°C. In addition, forward on-current stressing of the MOSFETs show the devices to be stable up to 1000 hrs of operation.