Proposal of the Thermal Equilibrium Model for SiC Hydrogen Etching Phenomena
p.211
p.211
Homoepitaxial Growth of Iron-Doped 4H-SiC Using BTMSM and t-Butylferrocene Precursors for Semi-Insulating Property
p.215
p.215
Epitaxial Growth of 4H-SiC on 4º Off-Axis (0001) and (000-1) Substrates by Hot-Wall CVD
p.219
p.219
Epitaxial Growth of 4H-SiC {0001} with Large Off-Angles by Chemical Vapor Deposition
p.223
p.223
Stability of Thick Layers Grown on (1-100) and (11-20) Orientations of 4H-SiC
p.227
p.227
Comparison of Propagation and Nucleation of Basal Plane Dislocations in 4H-SiC(000-1) and (0001) Epitaxy
p.231
p.231
Ab Initio Studies of the Surface Reaction of Si2C and SiC2 with Si on the 4H-SiC (000-1) Surface
p.235
p.235
Thick Epitaxial Layers on 4º Off-Oriented 4H-SiC Suited for PiN-Diodes with Blocking Voltages above 6.5 kV
p.239
p.239
Growth of Low Basal Plane Dislocation Density SiC Epitaxial Layers
p.243
p.243
Stability of Thick Layers Grown on (1-100) and (11-20) Orientations of 4H-SiC
Abstract:
Thick layers have been grown on (1120) and (1 1 00)6H-SiC substrates. The thicknesses are up to 90 #m obtained with growth rate of 180 #m/h. Even in such thick layers the surfaces are smooth and only disturbed by polishing scratches. The surfaces contain steps which facilitate reproduction of the substrate polytype.
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Periodical:
Materials Science Forum (Volumes 527-529)
Pages:
227-230
Citation:
Online since:
October 2006
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© 2006 Trans Tech Publications Ltd. All Rights Reserved
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