Paper Titles
Homoepitaxial Growth of Iron-Doped 4H-SiC Using BTMSM and t-Butylferrocene Precursors for Semi-Insulating Property
p.215
Epitaxial Growth of 4H-SiC on 4º Off-Axis (0001) and (000-1) Substrates by Hot-Wall CVD
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Epitaxial Growth of 4H-SiC {0001} with Large Off-Angles by Chemical Vapor Deposition
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Stability of Thick Layers Grown on (1-100) and (11-20) Orientations of 4H-SiC
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Comparison of Propagation and Nucleation of Basal Plane Dislocations in 4H-SiC(000-1) and (0001) Epitaxy
p.231
Ab Initio Studies of the Surface Reaction of Si2C and SiC2 with Si on the 4H-SiC (000-1) Surface
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Thick Epitaxial Layers on 4º Off-Oriented 4H-SiC Suited for PiN-Diodes with Blocking Voltages above 6.5 kV
p.239
Growth of Low Basal Plane Dislocation Density SiC Epitaxial Layers
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Experimental Observations of Extended Growth of 4H-SiC Webbed Cantilevers
p.247

Comparison of Propagation and Nucleation of Basal Plane Dislocations in 4H-SiC(000-1) and (0001) Epitaxy

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Abstract:

Propagation and nucleation of basal plane dislocations (BPDs) in 4H-SiC(000-1) and (0001) epitaxy were compared. Synchrotron reflection X-ray topography was performed before and after epitaxial growth to classify the BPDs into those propagated from the substrate into the epilayer and those nucleated in the epilayer. It was revealed that the propagation ratio of BPDs for the (000-1) epitaxy was significantly smaller than that for the (0001) epitaxy. Growing (000-1) epilayers at a high C/Si ratio of 1.2 achieves a further reduction in BPDs to only 3 cm-2 for those propagated from the substrate, and 16 cm-2 for those nucleated in the epilayer. A dramatic increase was also found in the nucleation of BPDs omitting the re-polishing and in-situ H2 etching procedure.

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Periodical:

Materials Science Forum (Volumes 527-529)

Pages:

231-234

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.527-529.231

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Online since:

October 2006

Authors:

Hidekazu Tsuchida, Isaho Kamata, Toshiyuki Miyanagi, Tomonori Nakamura, Koji Nakayama, R. Ishii, Yoshitaka Sugawara

Keywords:

Basal Plane Dislocation (BPD), C-Face, Epitaxy, Synchrotron Topography

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© 2006 Trans Tech Publications Ltd. All Rights Reserved

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