Paper Titles
Structure of Carrot Defects in 4H-SiC Epilayers
p.327
Characterization of SiC Crystals by Using Deep UV Excitation Raman Spectroscopy
p.333
Structures of Comets in a Homoepitaxially Grown 4H-SiC Film Studied by DUV Micro-Raman Spectroscopy
p.339
Raman Scattering Analyses of Stacking Faults in 3C-SiC Crystals
p.343
Observation of Free Carrier Redistribution Resulting from Stacking Fault Formation in Annealed 4H-SiC
p.347
Stacking Faults and 3C Quantum Wells in Hexagonal SiC Polytypes
p.351
Silicon Carbide: A Playground for 1D-Modulation Electronics
p.355
Peierls Barriers and Core Properties of Partial Dislocations in SiC
p.359
Characterization of Stacking Fault-Induced Behavior in 4H-SiC p-i-n Diodes
p.363

Observation of Free Carrier Redistribution Resulting from Stacking Fault Formation in Annealed 4H-SiC

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Abstract:

Bulk n+-4H-SiC wafers (n=1-2×1019 cm-3) containing annealing-induced stacking faults were examined by Raman scattering. The coupled plasmon-LO mode was observed to shift in a manner consistent with 1018 cm-3 doping in the 4H-SiC. Numerical simulations were performed using a self-consistent Poisson-Schrödinger solver and agree well with the experimental observations of carrier transfer from the 4H-SiC into the 3C-SiC stacking faults. The Raman data also shows that the 3C stacking faults induce a tensile strain on the surrounding 4H-SiC regions.

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Silicon Carbide and Related Materials 2005 View Preview

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Periodical:

Materials Science Forum (Volumes 527-529)

Pages:

347-350

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.527-529.347

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Online since:

October 2006

Authors:

Orest J. Glembocki, Marek Skowronski, S.M. Prokes, D. Kurt Gaskill, Joshua D. Caldwell

Keywords:

3C, 3C Stacking, 4H-SiC, Annealing, Doping Density, Epitaxial Growth, Free Carrier Concentration, LOPC, Poisson-Schrödinger, Quantum Well, Raman Shift, Raman Spectroscopy, Simulation, Stacking Fault, Strain, Stress, TEM

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© 2006 Trans Tech Publications Ltd. All Rights Reserved

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References

[1] J.Q. Liu, H. Chung, T. Kuhr, Q. Li, and M. Skowronski: Appl. Phys. Lett. Vol. 80, (2002), p.2111.

Google Scholar

[2] H. Lendenmann, F. Dahlquist, N. Johansson, R. Soderholm, P. A. Nilsson, J.P. Bergmann, and P. Skytt: Mater. Sci. Forum Vols. 353-356, (2001) p.727.

DOI: 10.4028/www.scientific.net/msf.353-356.727

Google Scholar

[3] S. Nakashima and H. Harima: Phys. Stat. Sol. (a), Vol. 162 (1997) p.39 and references therein.

Google Scholar

[4] M. Chafai, A. Jaouhari, A. Torres, R. Anton, E. Martı´n, J. Jimenez and W.C. Mitchel: J. Appl. Phys., Vol. 90, (2001) p.5211.

Google Scholar

[5] G. Snider, Dept. of Elect. Engineering, Univ. of Notre Dame.

Google Scholar

[6] B. Wenzien, P. Kickell, F. Bechstedt and G. Cappellin:, Phys. Rev., Vol. B52, (1995) p.10897.

Google Scholar

[7] H. J. Chung and M. Skowronski: J. Cryst. Growth. Vol. 259, (2003) p.52.

Google Scholar

[8] B.J. Skromme1, K. Palle, C.D. Poweleit, L.R. Bryant, W.M. Vetter, M. Dudley, K. Moore and T. Gehoski: Mater. Sci. Forum., Vols. 389-393, (2002) p.455.

DOI: 10.4028/www.scientific.net/msf.389-393.455

Google Scholar

[9] B.J. Skromme, M.K. Mikhov, L. Chen, G. Samson, R. Wang, C. Li, and I. Bhat: Mater. Sci. Forum., Vols. 457-460, (2002) p.581.

Google Scholar

[10] D. Olego, M. Cardona, and P. Vogl: Phys. Rev. B Vol. 25, (1982) p.3878.

Google Scholar