Paper Titles
Observation of Shrinking and Reformation of Shockley Stacking Faults by PL Mapping
p.375
Investigation of Mechanical Stress-Induced Double Stacking Faults in (11-20) Highly N-Doped 4H-SiC Combining Optical Microscopy, TEM, Contrast Simulation and Dislocation Core Reconstruction
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Overlapping Shockley/Frank Faults in 4H-SiC PiN Diodes
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Examining Dislocations in SiC Epitaxy by Light Emission from Simple Diode Structures
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Photoemission of 4H-SiC pin-Diodes Epitaxied by the Sublimation Method
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Investigation of Structural Stability in 4H-SiC Structures with Heavy Ion Implanted Interface
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Origin of Surface Morphological Defects in 4H-SiC Homoepitaxial Films
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Structure of “Star” Defect in 4H-SiC Substrates and Epilayers
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Synchrotron X-ray Topographic Analysis of Dislocation Structures in Bulk SiC Single Crystal
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Photoemission of 4H-SiC pin-Diodes Epitaxied by the Sublimation Method

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Abstract:

4H-SiC pin diodes were fabricated on epitaxial layers grown by Sandwich Sublimation Method (SSM). I-V and photoemission measurements were conducted on these devices. These measurements show hot spots responsible for a soft breakdown and evidence triangular shape defects previously observed in 4H-SiC pin diodes made on CVD epitaxial layers. These results agree with the morphology studies which indicate that the SSM-grown layers have a higher number of structural defects than their counterparts.

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Periodical:

Materials Science Forum (Volumes 527-529)

Pages:

391-394

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.527-529.391

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Online since:

October 2006

Authors:

Nicolas Camara, Konstantinos Zekentes, Edwige Bano, Aurelie Thuaire, Alexander A. Lebedev

Keywords:

Photoemission Microscopy, PiN Diode, Sandwich Sublimation Method, Structural Defects

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© 2006 Trans Tech Publications Ltd. All Rights Reserved

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