Synchrotron X-ray Topographic Analysis of Dislocation Structures in Bulk SiC Single Crystal

Satoshi Yamaguchi; Daisuke Nakamura; Itaru Gunjishima; Yoshiharu Hirose

doi:10.4028/www.scientific.net/MSF.527-529.407

Paper Titles

Photoemission of 4H-SiC pin-Diodes Epitaxied by the Sublimation Method
p.391

Investigation of Structural Stability in 4H-SiC Structures with Heavy Ion Implanted Interface
p.395

Origin of Surface Morphological Defects in 4H-SiC Homoepitaxial Films
p.399

Structure of “Star” Defect in 4H-SiC Substrates and Epilayers
p.403

Synchrotron X-ray Topographic Analysis of Dislocation Structures in Bulk SiC Single Crystal
p.407

Simulation of Threading Edge Dislocation Images in X-Ray Topographs of Silicon Carbide Homo-Epilayers
p.411

Development of Non-Destructive In-House Observation Techniques for Dislocations and Stacking Faults in SiC Epilayers
p.415

Why Are Only Some Basal Plane Dislocations Converted to Threading Edge Dislocations During SiC Epitaxy?
p.419

3-Dimensional Non-Destructive Dislocation Analyses in SiC Measured by Planar Electron-Beam-Induced Current Method
p.423

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Synchrotron X-ray Topographic Analysis of Dislocation Structures in Bulk SiC Single Crystal

Abstract:

The detailed properties of the dislocations of SiC crystals were analyzed using ultrahigh-quality substrates manufactured by RAF (repeated a-face) growth method by means of bulk X-ray topography. From this analysis, we could reveal the detailed features of one type of basal plane dislocations and two types of threading dislocations. The basal plane dislocations were screw type with Burgers vector were parallel to <11-20> direction. One of the threading dislocations was mixed type close to screw dislocation parallel to the growth direction with Burgers vector of 1c+na (n=0, 1, 2, …). Another was the edge type parallel to the c-axis, which was lying between two basal plane dislocations. Moreover, these dislocations were found to be connecting with each other, constituting large network structures.