Paper Titles
Origin of Surface Morphological Defects in 4H-SiC Homoepitaxial Films
p.399
Structure of “Star” Defect in 4H-SiC Substrates and Epilayers
p.403
Synchrotron X-ray Topographic Analysis of Dislocation Structures in Bulk SiC Single Crystal
p.407
Simulation of Threading Edge Dislocation Images in X-Ray Topographs of Silicon Carbide Homo-Epilayers
p.411
Development of Non-Destructive In-House Observation Techniques for Dislocations and Stacking Faults in SiC Epilayers
p.415
Why Are Only Some Basal Plane Dislocations Converted to Threading Edge Dislocations During SiC Epitaxy?
p.419
3-Dimensional Non-Destructive Dislocation Analyses in SiC Measured by Planar Electron-Beam-Induced Current Method
p.423
Effect of Crystal Defects on Reverse I-V Characteristics of 4H-SiC APDs
p.427
Structural Defects and Critical Electric Field in 3C-SiC
p.431

Development of Non-Destructive In-House Observation Techniques for Dislocations and Stacking Faults in SiC Epilayers

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Abstract:

We have developed non-destructive in-house observation techniques for dislocations and stacking faults (SFs) in 4H-SiC epilayers. Low temperature photoluminescence (PL) mapping was carried out at 100K using He-Cd laser (325 nm) as an exciation source. PL mapping at ~420 nm was used to investigate basal plane dislocations (BPDs), Shockley stacking faults (SSFs) and boundary, while PL mapping at ~470 nm and 100K obtained in-grown SF images. In addition, using a high-resolution laboratory X-ray topography system with a four-crystal collimator, we succeeded in recording BPDs propagating along [11-20]. From the measurement results, new evaluation techniques for dislocations and SFs other than KOH etching and Synchotron radiation topography were demonstrated on Si- and C-face 4H-SiC epilayers.

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Periodical:

Materials Science Forum (Volumes 527-529)

Pages:

415-418

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.527-529.415

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Online since:

October 2006

Authors:

Isaho Kamata, Hidekazu Tsuchida, Toshiyuki Miyanagi, Tomonori Nakamura

Keywords:

Dislocation, PL Mapping, Stacking Fault, X-Ray Topography

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© 2006 Trans Tech Publications Ltd. All Rights Reserved

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