Paper Titles
Synchrotron X-ray Topographic Analysis of Dislocation Structures in Bulk SiC Single Crystal
p.407
Simulation of Threading Edge Dislocation Images in X-Ray Topographs of Silicon Carbide Homo-Epilayers
p.411
Development of Non-Destructive In-House Observation Techniques for Dislocations and Stacking Faults in SiC Epilayers
p.415
Why Are Only Some Basal Plane Dislocations Converted to Threading Edge Dislocations During SiC Epitaxy?
p.419
3-Dimensional Non-Destructive Dislocation Analyses in SiC Measured by Planar Electron-Beam-Induced Current Method
p.423
Effect of Crystal Defects on Reverse I-V Characteristics of 4H-SiC APDs
p.427
Structural Defects and Critical Electric Field in 3C-SiC
p.431
Giant Burgers Vector Micropipe-Dislocations in Silicon Carbide Investigated by Atomic Force Microscopy
p.435
Open Core Dislocations and Surface Energy of SiC
p.439

3-Dimensional Non-Destructive Dislocation Analyses in SiC Measured by Planar Electron-Beam-Induced Current Method

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Abstract:

Propagations of dislocations in 4H-SiC were evaluated three-dimensionally by a planar mapping EBIC method with the control of accelerating voltages. Screw dislocation (SD), edge dislocation (ED), and basal plane dislocation (BPD) were clearly observed through the 20nm-thick Ni Schottky contact on SiC. From the analysis of BPD extended on {0001}, the intensity of EBIC signals was proportional to the depth position of defect. In addition, the information of the decomposition and combination for dislocations can be obtained from the fluctuation of EBIC signal along the scanning position.

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Silicon Carbide and Related Materials 2005 View Preview

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Periodical:

Materials Science Forum (Volumes 527-529)

Pages:

423-426

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.527-529.423

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Online since:

October 2006

Authors:

Y. Yanagisawa, Tomoaki Hatayama, Hiroshi Yano, Yukiharu Uraoka, Takashi Fuyuki

Keywords:

Dislocation, EBIC, Minority Carrier Diffusion Length

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© 2006 Trans Tech Publications Ltd. All Rights Reserved

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