Optical Studies of Deep Centers in Semi-Insulating SiC

Björn Magnusson; Reino Aavikko; Kimmo Saarinen; Nguyen Tien Son; Erik Janzén

doi:10.4028/www.scientific.net/MSF.527-529.455

Paper Titles

Open Core Dislocations and Surface Energy of SiC
p.439

Comparison between Measurement Techniques Used for Determination of the Micropipe Density in SiC Substrates
p.443

A New Method of Mapping and Counting Micropipes in SiC Wafers
p.447

Identification of Polytypes in Sublimation Grown 4H-SiC Crystals by High Resolution X-Ray Diffractometry
p.451

Optical Studies of Deep Centers in Semi-Insulating SiC
p.455

Investigation of the Electronic Structure of the UD-4 Defect in 4H-SiC by Optical Techniques
p.461

High Energy Local Vibrational Modes of Carbon Aggregates in SiC: Experimental and Theoretical Insight
p.465

Non-Equilibrium Carrier Diffusion and Recombination in Semi-Insulating PVT Grown Bulk 6H-SiC Crystals
p.469

Origin of the Up-Conversion Process in 4H SiC
p.473

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Optical Studies of Deep Centers in Semi-Insulating SiC

Abstract:

Semi-insulating SiC grown by the HTCVD technique are studied by luminescence and absorption measurements and the results are compared to PAS and SIMS results. We have found that metal impurities are present but only in very small concentrations. The semi-insulating properties are instead determined by the intrinsic defects, mostly the silicon vacancy in hydrocarbon rich grown material and the carbon vacancy in the hydrocarbon poor grown material. The hydrocarbon poor material is stable upon annealing both from a vacancy concentration point of view and from a resistivity point of view. The hydrocarbon rich grown material does not stand the annealing at 1600 °C and the resistivity is decreased; from the absorption and PAS measurements we have observed that the decrease in silicon vacancy concentration fits the growth of the vacancy clusters.