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Enhanced Carrier Lifetime in Bulk-Grown 4H-SiC Substrates
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Growth of Micropipe-Free Single Crystal Silicon Carbide (SiC) Ingots Via Physical Vapor Transport (PVT)
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Growth and Characterization of Large Diameter 6H and 4H SiC Single Crystals
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Growth of SiC Boules with Low Boron Concentration
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Resistivity Distribution in Undoped 6H-SiC Boules and Wafers
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The Method for Enhancing Nitrogen Doping in 6H-SiC Single Crystals Grown by Sublimation Process: The Effect of Si Addition in SiC Powder Source
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Growth of SiC Boules with Low Boron Concentration

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Abstract:

The effects of growth conditions, diffusion barrier coatings, and hot zone materials on B incorporation in 6H-SiC crystals grown by physical vapor transport (PVT) were evaluated. Development of high purity source material with a B concentration less than 1.8x1015 atoms/cm3, was critical to the growth of boules with a B concentration less than 3.0x1016 atoms/cm3. Application of refractory metal carbide coatings to commercial graphite to serve as boron diffusion barriers and the use of very high purity pyrolytic graphite components ultimately led to the growth of SiC boules with boron concentrations as low as 2.4x1015 atoms/cm3. The effect of growth temperature and pressure were closely examined over a range from 2100°C to 2300°C and 5 to 13.5 Torr. This range of growth conditions and growth rates had no effect on B incorporation. Attempts to alter the gas phase stoichiometry through addition of hydrogen gas to the growth environment also had no impact on B incorporation. These results are explained by considering site competition effects and the ability of B to diffuse through the graphite growth cell components.

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Periodical:

Materials Science Forum (Volumes 527-529)

Pages:

47-50

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.527-529.47

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Online since:

October 2006

Authors:

Mark A. Fanton, R.L. Cavalero, R.G Ray, B.E. Weiland, W.J. Everson, David Snyder, Rick D. Gamble, Ed Oslosky

Keywords:

Boron, Graphite, Physical Vapor Transport

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© 2006 Trans Tech Publications Ltd. All Rights Reserved

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