Identification of the Triplet State N-V Defect in Neutron Irradiated Silicon Carbide by Electron Paramagnetic Resonance

Marina V. Muzafarova; Ivan V. Ilyin; E.N. Mokhov; Vladimir Ilich Sankin; P.G. Baranov

doi:10.4028/www.scientific.net/MSF.527-529.555

Paper Titles

Signature of the Negative Carbon Vacancy-Antisite Complex
p.539

Electron Paramagnetic Resonance Study of the HEI4/SI5 Center in 4H-SiC
p.543

Relationship between the EPR SI-5 Signal and the 0.65 eV Electron Trap in 4H- and 6H-SiC Polytypes
p.547

Identification of the Triplet State N-V Defect in Neutron Irradiated Silicon Carbide by Electron Paramagnetic Resonance
p.555

Possible Role of Hydrogen within the So-Called X Center in Semi-Insulating 4H-SiC
p.559

Trapping Recombination Process and Persistent Photoconductivity in Semi-Insulating 4H SiC
p.563

Identification of Deep Level Defects in SiC Bipolar Junction Transistors
p.567

Vacancy Defects Induced by Low Energy Electron Irradiation in 6H and 3C-SiC Monocrystals Characterized by Positron Annihilation Spectroscopy and Electron Paramagnetic Resonance
p.571

HomeMaterials Science ForumMaterials Science Forum Vols. 527-529Identification of the Triplet State N-V Defect in...

Identification of the Triplet State N-V Defect in Neutron Irradiated Silicon Carbide by Electron Paramagnetic Resonance

Abstract:

Two types of a new triplet centers labeled as N-V have been observed in heavily neutron irradiated (dose of 1021 cm-2) and high-temperature annealed (2000°C) 6H-SiC crystals. The centers have an axial symmetry along c-axis. Anisotropic hyperfine splitting due to the one 14N nucleus has been observed. The EPR spectra of N-V defects in the triplet state in 6H-SiC reveal strong temperature dependence. The parameters of these centers are similar to that for well-known N-V center in diamond. It seems to consist of silicon vacancy and carbon substitutional nitrogen in the adjacent lattice cites oriented along c-axis. Similar to the diamond N-V centers in SiC have been produced by neutron irradiation and high-temperature annealing of the crystals containing nitrogen. For the first shell the structure of the N-V defect in 6H-SiC is practically identical with that in diamond. The charge state of this defect seems to be +1 compare with neutral state for nitrogensilicon vacancy defect in 6H-SiC with S=1/2.