Trapping Recombination Process and Persistent Photoconductivity in Semi-Insulating 4H SiC

Ekaterina N. Kalabukhova; S.N. Lukin; D.V. Savchenko; A.A. Sitnikov; W.C. Mitchel; S.R. Smith; Siegmund Greulich-Weber

doi:10.4028/www.scientific.net/MSF.527-529.563

Paper Titles

Relationship between the EPR SI-5 Signal and the 0.65 eV Electron Trap in 4H- and 6H-SiC Polytypes
p.547

Identification of the Triplet State N-V Defect in Neutron Irradiated Silicon Carbide by Electron Paramagnetic Resonance
p.555

Possible Role of Hydrogen within the So-Called X Center in Semi-Insulating 4H-SiC
p.559

Trapping Recombination Process and Persistent Photoconductivity in Semi-Insulating 4H SiC
p.563

Identification of Deep Level Defects in SiC Bipolar Junction Transistors
p.567

Vacancy Defects Induced by Low Energy Electron Irradiation in 6H and 3C-SiC Monocrystals Characterized by Positron Annihilation Spectroscopy and Electron Paramagnetic Resonance
p.571

Clustering of Vacancies in Semi-Insulating SiC Observed with Positron Spectroscopy
p.575

Electronic Raman Studies of Shallow Donors in Silicon Carbide
p.579

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Trapping Recombination Process and Persistent Photoconductivity in Semi-Insulating 4H SiC

Abstract:

The decay kinetics of a persistent photoconductivity (PPC) in undoped semi-insulating 4H SiC and intercenter charge transfer were studied with EPR, photo-EPR and optical admittance spectroscopy (OAS). A thermally activated charge transfer process that occurs in the dark has been observed. The PPC effect was observed directly in changes in the quality factor of the EPR cavity before and after illumination and by the decay of the OAS signal for deep levels, and indirectly by the excitation and decay of the nitrogen and boron EPR lines that were not observed in the dark before illumination. The decay kinetics of the PPC and photo-induced carrier capture by nitrogen and boron levels were found to follow a stretched exponential form. The PPC in the temperature range from 77 to 300K was found to be produced by a thermally induced charge transfer process involving deep trap levels.