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Hydrogen Nanochemistry Achieving Clean and Pre-Oxidized Silicon Carbide Surface Metallization
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Hydrogen Nanochemistry Achieving Clean and Pre-Oxidized Silicon Carbide Surface Metallization

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Silicon Carbide and Related Materials 2005 View Preview

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Periodical:

Materials Science Forum (Volumes 527-529)

Pages:

667-672

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.527-529.667

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Online since:

October 2006

Authors:

P. Soukiassian, M. Silly, C. Radtke, H. Enriquez, M. D'Angelo, V. Derycke, V.Yu. Aristov, F. Amy, Y.J. Chabal, P. Moras, M. Pedio, S. Gardonio, C. Ottaviani, P. Perfetti

Keywords:

Clean and Oxidized Surfaces, Core Level and Valence Band Photoemission Spectroscopies, Cubic Silicon Carbide (3C-SiC), Hydrogen, Infrared Absorption Spectroscopy, Metallization, Scanning Tunneling Microscopy, Scanning Tunneling Spectroscopy, Synchrotron Radiation (XRD)

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© 2006 Trans Tech Publications Ltd. All Rights Reserved

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