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Processing of Poly-SiC Substrates with Large Grains for Wafer-Bonding
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Basal Plane Dislocation Dynamics in Highly p-Type Doped versus Highly n-Type Doped SiC
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High Quality SiC Crystals Grown by the Physical Vapor Transport Method with a New Crucible Design
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Active Thermal Interaction of Source and Crystal Surfaces in PVT SiC Crystal Growth
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Basal Plane Dislocation Dynamics in Highly p-Type Doped versus Highly n-Type Doped SiC

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Abstract:

The long term performance of today’s SiC based bipolar power devices suffer strongly from stacking fault formation caused by slip of basal plane dislocations, the latter often originating from the n-type doped SiC substrate wafer. In this paper, using sequentially p-type / n-type / p-type doped SiC crystals, we address the question, whether basal plane dislocation generation and annihilation behaves differently in n-type and p-type SiC. We have found that basal plane dislocations are absent or at least appear significantly less pronounced in p-type doped SiC, which may become of great importance for the stacking fault problem in SiC.

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Periodical:

Materials Science Forum (Volumes 527-529)

Pages:

79-82

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.527-529.79

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Online since:

October 2006

Authors:

Peter J. Wellmann, Desirée Queren, Ralf Müller, Sakwe Aloysius Sakwe, Ulrike Künecke

Keywords:

Bipolar Devices, Dislocation, p-Type SiC, Stacking Fault

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© 2006 Trans Tech Publications Ltd. All Rights Reserved

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