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Preface
Reduction of Dislocations in the Bulk Growth of SiC Crystals
p.3
The Spatial Distribution of Defects and Its Dependence on Seed Polarity and Off-Orientation during Growth of 4H-SiC Single Crystals
p.9
Fundamental Limitations of SiC PVT Growth Reactors with Cylindrical Heaters
p.15
Halide-CVD Growth of Bulk SiC Crystals
p.21
Growth Kinetics and Polytype Stability in Halide Chemical Vapor Deposition of SiC
p.27
Enhanced Carrier Lifetime in Bulk-Grown 4H-SiC Substrates
p.31

The Spatial Distribution of Defects and Its Dependence on Seed Polarity and Off-Orientation during Growth of 4H-SiC Single Crystals

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Abstract:

The defect distribution in 4H-SiC single crystals in dependence on the seed polarity and its off-orientation was investigated by KOH-etching, optical microscopy and X-ray topography. Micropipe density, stacking fault density and dislocation density were determined for 2” crystals grown in <000-1> direction 0 - 7° off towards <11-20> and for crystals up to 1” in diameter grown in <11-20> or a- and <1-100> or m-directions and using repeated a-face growth. For the growth in polar directions the micropipe density and dislocation density decrease with increasing offorientation of the seed. A similar behavior was found for the stacking fault density and dislocation density in non-polar directions with off-orientation to c-direction. Nevertheless, while the dislocation density could be reduced up to three orders of magnitude for the growth along non-polar directions, the stacking fault density was continuously increasing. Additionally, the defect distribution after repeated a-face growth will be discussed in terms of growth related and kinetic models.

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Periodical:

Materials Science Forum (Volumes 527-529)

Pages:

9-14

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.527-529.9

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Online since:

October 2006

Authors:

H. J. Rost, M. Schmidbauer, D. Siche

Keywords:

Bulk Growth, Defect Distribution, Orientation Dependency, Polarity

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© 2006 Trans Tech Publications Ltd. All Rights Reserved

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