Paper Titles
Effect of Additional Silane on In Situ H2 Etching prior to 4H-SiC Homoepitaxial Growth
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Epitaxial Growth of 4H-SiC on (000-1) C-Face Substrates by Cold-Wall and Hot-Wall Chemical Vapor Deposition
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Film Morphology and Process Conditions in Epitaxial Silicon Carbide Growth via Chlorides Route
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Growth and Photoluminescence Study of Aluminium Doped SiC Epitaxial Layers
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High Quality Uniform SiC Epitaxy for Power Device Applications
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High SiC Growth Rate Obtained by Vapour-Liquid-Solid Mechanism
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Homoepitaxial Growth of 4H-SiC Multi-Epilayers and its Application to UV Detection
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Homoepitaxial Growth of Vanadium-Doped 4H-SiC Using Bis-Trimethylsilylmethane and Verrocene Precursors
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Improved Mesa Designs for the Growth of Thin 4H-SiC Homoepitaxial Cantilevers
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High Quality Uniform SiC Epitaxy for Power Device Applications

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Abstract:

In this paper we present highly uniform SiC epitaxy in a horizontal hot-wall CVD reactor with wafer rotation. Epilayers with excellent thickness uniformity of better than 1% and doping uniformity better than 5% are obtained on 3-in, 4° off-axis substrates. The same growth conditions for uniform epitaxy also generate smooth surface morphology for the 4° epiwafers. Well controlled doping for both n- and p-type epilayers is obtained. Abrupt interface transition between n- and pdoped layers in a wide doping range is demonstrated. Tight process control for both thickness and doping is evidenced by the data collected from the epi operations. The average deviation from target is 2.5% for thickness and 6% for doping. PiN diodes fabricated on a standard 3-in, 4° epiwafer have shown impressive performance. More than half of the 1 mm2 devices block 1 kV (2.3 MV/cm) with a low leakage current of 1 μA.

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Periodical:

Materials Science Forum (Volumes 556-557)

Pages:

101-104

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.556-557.101

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Online since:

September 2007

Authors:

Jie Zhang, Esteban Romano, Janice Mazzola, Swapna G. Sunkari, Carl Hoff, Igor Sankin, Michael S. Mazzola

Keywords:

Epitaxy, Interface Transition, Morpholoy, Process Control, Uniformity

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© 2007 Trans Tech Publications Ltd. All Rights Reserved

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References

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0.

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[30] 0% 0 10 20 30 40 Wafers Deviation from Target -30. 0% -20. 0% -10. 0.

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0.

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[10] 0.

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[20] 0.

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[30] 0% Thickness Doping.

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