Paper Titles
Low Trap Concentration and Low Basal-Plane Dislocation Density in 4H-SiC Epilayers Grown at High Growth Rate
p.129
Low-Temperature Halo-Carbon Homoepitaxial Growth of 4H-SiC: Morphology, Doping, and Role of HCl Additive
p.133
Optimisation of Epitaxial Layer Growth with HCl Addition by Optical and Electrical Characterization
p.137
Progress in Cold-Wall Epitaxy for 4H-SiC High-Power Devices
p.141
Scaling of Chlorosilane SiC CVD to Multi-Wafer Epitaxy System
p.145
Selective Epitaxial Growth of 4H-SiC with SiO2 Mask by Low-Temperature Halo-Carbon Homoepitaxial Method
p.149
SiC Epitaxial Layers Grown by Sublimation Method and their Electrical Properties
p.153
Very High Growth Rate Epitaxy Processes with Chlorine Addition
p.157
SiC Heteropolytype Structures Grown by Sublimation Epitaxy
p.161

Scaling of Chlorosilane SiC CVD to Multi-Wafer Epitaxy System

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Abstract:

A SiC epitaxy process based on chlorosilane/propane chemistry has been successfully transferred from a single-wafer R&D system to a multi-wafer CVD reactor. The optimized process results in very smooth epi surface (RMS~0.24nm) and minimum surface pits (less than 0.5/cm2). Both n-type and p-type doping in a wide range are demonstrated using nitrogen and aluminum, respectively. The high performance benchmarks for thickness uniformity (intra-wafer variation <1% and inter-wafer variation <1%) and doping uniformity (intra-wafer variation <6% and inter-wafer variation <3%) are achieved on 5 x 3-inch wafers. The carrier lifetime in these epilayers measured by μ-PCD is over 5 μs, the longest value reported so far for SiC epitaxial wafers.

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Periodical:

Materials Science Forum (Volumes 556-557)

Pages:

145-148

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.556-557.145

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Online since:

September 2007

Authors:

Jian Wei Wan, Mark J. Loboda, Mike F. MacMillan, Gil Yong Chung, E.P. Carlson, V.M. Torres

Keywords:

Chlorosilane, Epitaxy, Silicon Carbide (SiC)

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© 2007 Trans Tech Publications Ltd. All Rights Reserved

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