Paper Titles
Defect and Growth Analysis of SiC Bulk Single Crystals with High Nitrogen Doping
p.239
Defect Etching of Non-Polar and Semi-Polar Faces in SiC
p.243
Dislocation in 4H n+ SiC Substrates and their Relationship with Epilayer Defects
p.247
Distinction of the Nuclei of Shockley Faults in 4H-SiC{0001} pin Diodes by Electroluminescence Imaging
p.251
Epitaxial Growth on Metal Bonded SiC Substrates: Transmission Electron Microscopy and Photoluminescence
p.255
Impact of n-Type versus p-Type Doping on Mechanical Properties and Dislocation Evolution during SiC Crystal Growth
p.259
Influence of Growth Temperature on the Evolution of Dislocations during PVT Growth of Bulk SiC Single Crystals
p.263
In Situ X-Ray Measurements of Defect Generation during PVT Growth of SiC
p.267
Migration of Dislocations in 4H-SiC Epilayers during the Ion Implantation Process
p.271

Epitaxial Growth on Metal Bonded SiC Substrates: Transmission Electron Microscopy and Photoluminescence

Article Preview

Abstract:

QuaSiC TM substrates can be obtained by transferring a single crystal SiC layer onto a poly SiC substrate using the Smart Cut TM technology. In order to overcome the difficulty of limited thickness, an important improvement has been demonstrated, which consists in obtaining thick SiC structure by growing epitaxial SiC layers on top of transferred layers. The aim of this work is a structural analysis of such layers by Transmission Electron Microscopy and Photoluminescence.

You might also be interested in these eBooks
Silicon Carbide and Related Materials 2006 View Preview

Info:

Periodical:

Materials Science Forum (Volumes 556-557)

Pages:

255-258

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.556-557.255

Citation:

Cite this paper

Online since:

September 2007

Authors:

Igor Matko, Bernard Chenevier, Jean Marie Bluet, Roland Madar, Fabrice Letertre, Wahib Saikaly

Keywords:

Photoluminescence (PL), QuaSiCTM Substrates, TEM

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2007 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

References

[1] F. Letertre, E. Jalaguier, L. Di Cioccio, F. Templier, J.M. Bluet, C. Banc, I. Matko, B. Chenevier, E. Bano, G. Guillot, T. Billon, B. Aspar, R. Madar and B. Ghyselen: Mater. Sci. Forum Vol. 389-393 (2002), p.151.

DOI: 10.4028/www.scientific.net/msf.389-393.151

Google Scholar

[2] F. Templier, N. Daval, L. Di Cioccio, D. Bourgeat, F. Letertre, D. Planson, J.P. Chante, and T. Billon : Mat. Res. Soc. Sym. Proc., Vol. 742 (2003), p.393.

DOI: 10.1557/proc-742-k7.9

Google Scholar

[3] I. Matko, B. Chenevier, R. Madar, H. Roussel, S. Coindeau , F. Letertre, C. Richtarch and L. Di Cioccio: Mater. Sci. Forum, Vol. 483-485 (2005), p.781.

DOI: 10.4028/www.scientific.net/msf.483-485.781

Google Scholar

[4] E. Neyret, L. Di Cioccio, E. Blanquet, C. Raffy, C. Pudda, T. Billon and J. Camassel: Mater. Sci. Forum Vol. 338-342 (2000), p.1041.

DOI: 10.4028/www.scientific.net/msf.338-342.1041

Google Scholar

[5] S. Juillaguet, C. Balloud, J. Pernot, C. Sartel, V. Soulière, J. Camassel and Y. Monteil : Mater. Sci. Forum Vol. 457-460 (2004), p.577.

DOI: 10.4028/www.scientific.net/msf.457-460.577

Google Scholar

[6] T. Kimoto and H. Matsunami: J. Appl. Phys. 75 (1994), p.850.

Google Scholar

[7] C. Hallin, A.O. Konstantinov, B. Pécz, O. Kordina and E. Janzén: Diamond and Related Materials 6 (1997).

DOI: 10.1016/s0925-9635(97)00083-6

Google Scholar