Paper Titles
Defect Etching of Non-Polar and Semi-Polar Faces in SiC
p.243
Dislocation in 4H n+ SiC Substrates and their Relationship with Epilayer Defects
p.247
Distinction of the Nuclei of Shockley Faults in 4H-SiC{0001} pin Diodes by Electroluminescence Imaging
p.251
Epitaxial Growth on Metal Bonded SiC Substrates: Transmission Electron Microscopy and Photoluminescence
p.255
Impact of n-Type versus p-Type Doping on Mechanical Properties and Dislocation Evolution during SiC Crystal Growth
p.259
Influence of Growth Temperature on the Evolution of Dislocations during PVT Growth of Bulk SiC Single Crystals
p.263
In Situ X-Ray Measurements of Defect Generation during PVT Growth of SiC
p.267
Migration of Dislocations in 4H-SiC Epilayers during the Ion Implantation Process
p.271
Nondestructive Analysis of Stacking Faults in 4H-SiC Bulk Wafers by Room-Temperature Photoluminescence Mapping under Deep UV Excitation
p.275

Impact of n-Type versus p-Type Doping on Mechanical Properties and Dislocation Evolution during SiC Crystal Growth

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Abstract:

The origin of dislocation evolution during SiC crystal growth is usually related to lattice relaxation mechanisms caused by thermal stress. In this paper we discuss dislocation generation and dislocation propagation related to doping and suppression of basal plane dislocations, the latter being of particular interest for bipolar electronic devices. We have prepared alternating p-/n-/pdoped SiC crystals using the donor nitrogen and the acceptors aluminum or boron. In addition we determined the mechanical properties of n-type and p-type SiC; in particular we measured the critical shear stress by nano-indentation on c-plane and a-plane 6H-SiC surfaces. A considerably lower basal plane dislocation density is found in aluminum as well as in boron doped p-type SiC compared to nitrogen doped n-type SiC. It is concluded that the explanation of the reduced basal plane dislocation density in p-type SiC needs the consideration of electronic as well as mechanical effects.

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Periodical:

Materials Science Forum (Volumes 556-557)

Pages:

259-262

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.556-557.259

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Online since:

September 2007

Authors:

Peter J. Wellmann, Philip Hens, Sakwe Aloysius Sakwe, Desirée Queren, Ralf Müller, Karsten Durst, Matthias Göken

Keywords:

Basal Plane Dislocation (BPD), Doping, PVT Growth

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© 2007 Trans Tech Publications Ltd. All Rights Reserved

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