XRD and Photoluminescence Whole-Wafer Mapping of 4H-SiC Wafers

Tom Ryan; John Hennessy; Colin Harrison; Shou Yin Wang; Gyles Webster; Akihiko Majima

doi:10.4028/www.scientific.net/MSF.556-557.299

Paper Titles

Properties of Thermally Etched 4H-SiC by Chlorine-Oxygen System
p.283

The D_I Defect is Associated with a Stacking Fault?
p.287

Trends in Commercially Available SiC Substrates
p.291

Whole-Wafer Mapping of Dislocations in 4H-SiC Epitaxy
p.295

XRD and Photoluminescence Whole-Wafer Mapping of 4H-SiC Wafers
p.299

XRD Characterization of the 6H-SiC Single Crystal Grown from Si-C-Ti Ternary Solution
p.303

(Nitrogen-Vacancy)-Complex Formation in SiC: Experiment and Theory
p.307

Photoluminescence Investigation of Defects Created by Electron Bombardment of 4H-SiC
p.313

A Study of the D_II Defect after Electron Irradiation and Annealing of 4H SiC
p.319

HomeMaterials Science ForumMaterials Science Forum Vols. 556-557XRD and Photoluminescence Whole-Wafer Mapping of...

XRD and Photoluminescence Whole-Wafer Mapping of 4H-SiC Wafers

Abstract:

The commercial availability of SiC-based devices has been limited by a number of factors including wafer supply, cost, wafer size and crystal quality. Recently a number of vendors of 4H and 6H SiC wafers have emerged and 100 mm diameter wafers are commercially available. All vendors now claim to meet or exceed the existing SEMI specifications M55-0304. Both SEMI and manufacturers’ specifications focus on wafer dimensions and gross physical defects such as micropipes that are visible by optical inspection. In this paper we describe high-density XRD and PL mapping measurements on a series of nominally identical, semi-insulating 4H wafers from a range of manufacturers. We show very large variations in crystal quality, polytypism and doping/contamination within-wafer, from wafer-to-wafer and vendor-to-vendor. It is logical to assume that these variations may be responsible for observed variations in device properties and yield.