Micro-Photoluminescence Mapping of Defect Structures in SiC Wafers

John Hennessy; Tom Ryan

doi:10.4028/www.scientific.net/MSF.556-557.383

Paper Titles

Impurity Conduction in Silicon Carbide
p.367

Influence of Cooling Rate after High Temperature Annealing on Deep Levels in High-Purity Semi-Insulating 4H-SiC
p.371

Investigation of Charge Carrier Lifetime Temperature-Dependence in 4H-SiC Diodes
p.375

Mechanisms of Decrease in Hole Concentration in Al-Doped 4H-SiC by Irradiation of 200 keV Electrons
p.379

Micro-Photoluminescence Mapping of Defect Structures in SiC Wafers
p.383

Micro-Raman Investigation of Defects in a 4H-SiC Homoepilayer
p.387

Nitrogen Donor Aggregation in 4H-SiC: g-Tensor Calculations
p.391

Nonequilibrium Carrier Dynamics in DPB-Free 3C-SiC Layer Studied by Dynamic Grating Technique in Wide Excitation and Temperature Range
p.395

Optical and Electron Paramagnetic Resonance Study of Sponge Silicon Carbide Prepared by Direct Synthesis
p.399

HomeMaterials Science ForumMaterials Science Forum Vols. 556-557Micro-Photoluminescence Mapping of Defect...

Micro-Photoluminescence Mapping of Defect Structures in SiC Wafers

Abstract:

Micro-photoluminescence can be used to image electrically active structural defects in SiC. Under suitable excitation conditions it is possible to observe both band-edge PL and near bandedge PL from recombination via a shallow boron acceptor. The intensity of the band-edge emission is related to the carrier lifetime – and is reduced by the presence of structural or interfacial defects. The intensity of the deep level PL is a complex function of the number of radiative centers and the number of centers limiting carrier lifetime. Micro-PL mapping can provide information on the spatial distribution of electrically active defects in SiC.