Paper Titles
Investigation of Charge Carrier Lifetime Temperature-Dependence in 4H-SiC Diodes
p.375
Mechanisms of Decrease in Hole Concentration in Al-Doped 4H-SiC by Irradiation of 200 keV Electrons
p.379
Micro-Photoluminescence Mapping of Defect Structures in SiC Wafers
p.383
Micro-Raman Investigation of Defects in a 4H-SiC Homoepilayer
p.387
Nitrogen Donor Aggregation in 4H-SiC: g-Tensor Calculations
p.391
Nonequilibrium Carrier Dynamics in DPB-Free 3C-SiC Layer Studied by Dynamic Grating Technique in Wide Excitation and Temperature Range
p.395
Optical and Electron Paramagnetic Resonance Study of Sponge Silicon Carbide Prepared by Direct Synthesis
p.399
Optical Investigation of Cubic SiC Layers Grown on Hexagonal SiC Substrates by CVD and VLS
p.403
Photoluminescence of 6H-SiC Nanostructures
p.407

Nitrogen Donor Aggregation in 4H-SiC: g-Tensor Calculations

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Abstract:

The microscopic origin of the Nx EPR-lines observed in heavily nitrogen doped 4H-SiC and 6H-SiC is discussed with the help of EPR parameters calculated from first principles. Based on the symmetry of the g-tensors we propose a model with distant NC donor pairs on inequivalent lattice sites which are coupled to S=1 centers but with nearly vanishing zero-field splittings, giving rise to an essentially S=1/2 like spectrum. The proposed aggregation in neutral donor pairs can contribute to the saturation of the free concentration observed in heavily nitrogen doped SiC.

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Periodical:

Materials Science Forum (Volumes 556-557)

Pages:

391-394

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.556-557.391

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Online since:

September 2007

Authors:

Uwe Gerstmann, E. Rauls, Siegmund Greulich-Weber, Ekaterina N. Kalabukhova, D.V. Savchenko, Andreas Pöppl, Francesco Mauri

Keywords:

Density Function Theory (DFT), g-Tensor, Nitrogen, Paramagnetic Resonance

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© 2007 Trans Tech Publications Ltd. All Rights Reserved

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