Paper Titles
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p.419
Simultaneous Determination of the Carrier Concentration, Mobility and Thickness of SiC Homo-Epilayers Using Terahertz Reflectance Spectroscopy
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Temperature Dependence of the Band-Edge Injection Electroluminescence of 3C-SiC pn Structure
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The Premature Breakdown in 6H-SiC p-n Junction
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Theory of the Stark Effect on the Donor Levels in 4H Silicon Carbide
p.435
Point Defects and their Aggregation in Silicon Carbide
p.439
A Theoretical Study on Aluminium-Related Defects in SiC
p.445
Deep Acceptor Levels of the Carbon Vacancy-Carbon Antisite Pairs in 4H-SiC
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Electron Paramagnetic Resonance Study of Carbon Antisite-Vacancy Pair in p-Type 4H-SiC
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Theory of the Stark Effect on the Donor Levels in 4H Silicon Carbide

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Abstract:

The paper presents the results of a quantitative theoretical calculation concerning the shift and the splitting of the ground-state manifold of the nitrogen donor in 4H-SiC under uniform electric field. Two cases are distinguished corresponding to a field applied parallel and perpendicular to the crystal axis. A comparison with the phosphorus donor in Si is carried out.

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Silicon Carbide and Related Materials 2006 View Preview

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Periodical:

Materials Science Forum (Volumes 556-557)

Pages:

435-438

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.556-557.435

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Online since:

September 2007

Authors:

Ivan G. Ivanov, Erik Janzén

Keywords:

Donor State, Electric Field, Stark Effect

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© 2007 Trans Tech Publications Ltd. All Rights Reserved

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References

[1] G.D.J. Smit, S. Rogge, J. Caro, and T. M. Klapwijk: Phys. Rev. Vol. B 70 (2004), 035206.

Google Scholar

[2] M. Friesen: Phys. Rev. Lett. Vol. 94 (2005), 186403.

Google Scholar

[3] B. E. Kane: Nature (London) Vol. 393 (1998), 133.

Google Scholar

[4] K. Larsson and H. G. Grimmeiss: J. Appl. Phys. Vol. 63 (1988), 4524.

Google Scholar

[5] I. G. Ivanov, B. Magnusson, and E. Janzén: Phys. Rev. Vol. B67 (2003), 165212.

Google Scholar

[6] I. G. Ivanov, A. Stelmach, M. Kleverman, and E. Janzén: Phys. Rev. Vol. B73 (2006), 045205.

Google Scholar

[7] W. Kohn: Solid State Phys. Vol. 5 (1957), 257.

Google Scholar

[8] C. Persson and U. Lindefelt: J. Appl. Phys. Vol. 87 (1997).

Google Scholar

[2] The insert shows the minute decrease of the contribution of valley 1, along the wave vector of which the electric field E⊥c is applied, into the total wavefunction given by Eq. (3).

Google Scholar