Paper Titles
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Evaluation of Unintentionally Doped Impurities in Silicon Carbide Substrates Using Neutron Activation Analysis
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Influence Of Growth Conditions on Irradiation Induced Defects in 4H-SiC
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Intrinsic Defects in Semi-Insulating SiC: Deep Levels and their Roles in Carrier Compensation
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New Insight in Scandium-Mediated Growth Techniques: Sc-Related Defects in 4H-SiC and 6H-SiC
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Influence Of Growth Conditions on Irradiation Induced Defects in 4H-SiC

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Abstract:

Nitrogen doped 4H-SiC epitaxial layers grown by hot-wall chemical vapor deposition were investigated by Deep Level Transient Spectroscopy after irradiation with 6 MeV electrons at room temperature. This study is focusing on the influence of nitrogen doping and C/Si ratio on the behaviour of the Z1,2 and EH6,7 levels which occur in already as-grown material but are substantially enhanced by electron and ion irradiation. It was found that both the Z1,2 and EH6,7 concentrations increase with both the nitrogen doping and the C/Si ratio. However, while the Z1,2 concentration increases during post-irradiation thermal treatment the opposite holds for the EH6,7 level especially in silicon rich samples. On the basis of these results, the influence of carbon and nitrogen on the formation of the Z1,2 complex is reconfirmed and a possible identity of the EH6,7 defect is discussed.

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Periodical:

Materials Science Forum (Volumes 556-557)

Pages:

461-464

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.556-557.461

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Online since:

September 2007

Authors:

Ioana Pintilie, K. Irmscher, Ulrike Grossner, Bengt Gunnar Svensson, Bernd Thomas

Keywords:

4H-SiC, C/Si Ratio, Hot-Wall Chemical Vapor Deposition, Nitrogen Doping, Z1,2 and EH6,7 Defect Levels

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© 2007 Trans Tech Publications Ltd. All Rights Reserved

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References

[1] K. Fujihira, T. Kimoto and H. Matsunami: Appl. Phys. Lett. 80 (2002), p.1586.

Google Scholar

[2] I. Pintilie, L. Pintilie, K. Irmscher and B. Thomas: Mater. Sci. Forum 433-436 (2003), p.463.

Google Scholar

[3] I. Pintilie, L. Pintilie, and K. Irmscher, B. Thomas: Appl. Phys. Lett. 81 (2002), p.4841.

Google Scholar

[4] J. Zhang, L. Storasta, J.P. Bergman, N.T. Son and E. Janzen: J. Appl. Phys. 93 (2003), p.4708.

Google Scholar

[5] Y. Negoro, T. Kimoto and H. Matsunami: Appl. Phys. Lett. 85 (2004), p.1716.

Google Scholar

[6] T. Dalibor, G. Pensl, H. Matsunami, T. Kimoto, W. J. Choyke, A. Schöner and N. Nordell: phys. stat. sol. (a) 162 (1997), p.199.

DOI: 10.1002/1521-396x(199707)162:1<199::aid-pssa199>3.0.co;2-0

Google Scholar

[7] J. P. Doyle, M. K. Linnarsson, P. Pellegrino, N. Keskitalo, B. G. Svensson, A. Schöner, N. Nordell and J. L. Lindström: J. Appl. Phys. 84 (1998), p.1354.

DOI: 10.1063/1.368247

Google Scholar

[8] A. Kawasuso, F. Redman, R. Krause-Rehberg, M. Weidner, T. Frank, G. Pensl, P. Sperr, W. Triftshäuser and H. Itoh: Appl. Phys. Lett. 79 (2001), p.3950.

DOI: 10.1063/1.1426259

Google Scholar

[9] T. Kimoto, S. Nakazawa, K. Hashimoto and H. Matsunami: Appl. Phys. Lett. 79 (2001), p.2761.

Google Scholar

[10] C. Hemmingsson, N. T. Son, A. Ellison, J. Zhang and E. Janzen: Phys. Rev. B 58 (1998), p. R10 119; 59 (1999), p.7768 (E).

DOI: 10.1103/physrevb.59.7768

Google Scholar

[11] L. Storasta, J. P. Bergman, E. Janzen and A. Henry, J. Appl. Phys. 96 (2004), p.4909.

Google Scholar

[12] T. A. G. Eberlein and R. Jones, Mater. Res. Soc. Symp. Proc. Vol. 864 (2005), p. E. 1. 2. 1.

Google Scholar

[13] A. Gali, N. T. Son and E. Janzen, Phys. Rev. B 73 (2006), p.033204.

Google Scholar

[14] M.L. David, G. Alfieri, E.V. Monakhov, A. Hallén, B.G. Svensson and J.F. Barbot: J. Appl. Phys. 95, (2004), p.4728.

Google Scholar

[15] H. Kortegaard-Nielsen, A. Hallén and B.G. Svensson: Phys. Rev. B 72, (2005), 085208.

Google Scholar

[16] D.J. Larkin, P.G. Neudeck, J. A. Powell and L. G. Matus: Appl. Phys. Lett. 65 (1994), p.1659.

Google Scholar

[17] G. Alfieri, E.V. Monakhov, B. G. Svensson and A. Hallén, J. Appl. Phys. 98 (2005), p.043518.

Google Scholar