Paper Titles
Influence Of Growth Conditions on Irradiation Induced Defects in 4H-SiC
p.461
Intrinsic Defects in Semi-Insulating SiC: Deep Levels and their Roles in Carrier Compensation
p.465
New Insight in Scandium-Mediated Growth Techniques: Sc-Related Defects in 4H-SiC and 6H-SiC
p.469
Point Defects in 4H SiC Grown by Halide Chemical Vapor Deposition
p.473
SIMS Investigation of Ge Incorporation in 3C-SiC Layers Grown from Ge-Si Melts
p.477
Atomic Crack Defects Developing at Silicon Carbide Surfaces Studied by STM, Synchrotron Radiation-Based μ-spot XPS and LEEM
p.481
Sodium Enhanced Oxidation of Si-Face 4H-SiC: A Method to Remove Near Interface Traps
p.487
Ab Initio Study of Clean and Hydrogen-Saturated Unreconstructed SiC{0001} Surfaces
p.493
An Approach to Model Temperature Effects of Interface Traps in 4H-SiC
p.497

SIMS Investigation of Ge Incorporation in 3C-SiC Layers Grown from Ge-Si Melts

Article Preview

Abstract:

We report the results of a SIMS and micro-Raman investigation performed on cubic (3C) SiC crystals grown on hexagonal SiC seeds using a Ge-Si bath and the so-called Vapor Liquid Solid growth technique. From SIMS measurements, we find a Ge concentration which, roughly, scales like the Ge concentration in the melt and, in term of micro-Raman measurements, explains the presence of weak but discernable Ge-Ge peaks around 300 cm-1. Since no similar Si-Si vibrations are found, this discard the possibility of having at the same time both Ge and Si constitutional super-cooling with two separate Ge and Si phases.

You might also be interested in these eBooks
Silicon Carbide and Related Materials 2006 View Preview

Info:

Periodical:

Materials Science Forum (Volumes 556-557)

Pages:

477-480

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.556-557.477

Citation:

Cite this paper

Online since:

September 2007

Authors:

Hervé Peyre, Nada Habka, Véronique Soulière, Maher Soueidan, Gabriel Ferro, Yves Monteil, Jean Camassel

Keywords:

Germanium, Limit Solubility, Micro Raman, SIMS, VLS Growth

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2007 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

References

[1] K. K. Lee, Y. Ishida, T. Ohshima, K. Kojima, Y. Tanaka, T. Takahashi, H. Okumura, K. Arai and T. Kamiya: Electron Device Letters IEEE Vol. 24 (2003), p.466.

DOI: 10.1109/led.2003.815006

Google Scholar

[2] M. Soueidan, G. Ferro, J. Dazord, Y. Monteil and G. Younes: J. Crystal Growth Vol. 275 (1-2) (2005), p.1011.

Google Scholar

[3] M. Soueidan and G. Ferro: Adv. Funct. Mater. Vol. 16 (2006), p.975.

Google Scholar

[4] D.H. Hofmann and M.H. Müller: Mater. Science and Engineering Vol. B61-62 (1999), p.29.

Google Scholar

[5] J. Eid, J.L. Santailler, B. Ferrand, P. Ferret, J. Pesenti, A. Basset, A. Passero, A. Mantzari, E.K. Polychroniadis, C. Balloud, P. Soares, J. Camassel: Proceedings ICSCRM-05 (in press).

DOI: 10.4028/www.scientific.net/msf.527-529.123

Google Scholar

[6] Yu.A. Vodakov, E.N. Mokhov, M.G. Ramm and A.D. Roenkov: Springer Proc. Physics Vol. 56 (1992), p.329.

Google Scholar

[7] S. Rath, M. L. Hsieh, P. Etchegoin and R. A. Stradling: Semicond. Sci. Technol. Vol. 18 (2003), p.566.

Google Scholar

[8] Z. Sui, H. Burke and I. Herman: Phys. Rev. Vol. B 48 (1993), p.2162.

Google Scholar