Paper Titles
The Mechanism of Interface State Passivation by NO
p.541
Two Dimensional Imaging of the Laterally Inhomogeneous Au/4H-SiC Schottky Barrier by Conductive Atomic Force Microscopy
p.545
XPS Study of the Electronic Properties of the Ce/4H-SiC Interface, and the Formation of the SiO2/Ce2Si2O7/4H-SiC Interface Structure upon Oxidation
p.549
Control of the Flatband Voltage of 4H-SiC Metal-Oxide Semiconductor (MOS) Capacitors by Co-Implantation of Nitrogen and Aluminum
p.555
Post-Implantation Annealing of SiC: Relevance of the Heating Rate
p.561
Achieving Low Sheet Resistance from Implanted P-Type Layers in 4H-SiC Using High Temperature Graphite Capped Annealing
p.567
Analysis of the Electrical Activation of P+ Implanted Layers as a Function of the Heating Rate of the Annealing Process
p.571
Comparison of Graphite and BN/AlN Annealing Caps for Ion Implanted SiC
p.575
Electrical Properties of N Ion Implanted Layer in 3C-SiC(100) Grown on Self-Standing 3C-SiC Substrate
p.579

Post-Implantation Annealing of SiC: Relevance of the Heating Rate

Article Preview

Abstract:

With the aim to set a starting point for future investigations on the relevance of the heating ramp on the annealing of ion implanted SiC, a review study is presented here. This study focuses on the heating rate of different annealing setups and presents results that highlight the relevance of the heating ramp on the morphological, structural and electrical properties of ion implanted <0001> 4H- and 6H-SiC. The post-implantation annealing results of hot and room temperature implanted SiC are so different that their presentation is kept distinct.

You might also be interested in these eBooks
Silicon Carbide and Related Materials 2006 View Preview

Info:

Periodical:

Materials Science Forum (Volumes 556-557)

Pages:

561-566

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.556-557.561

Citation:

Cite this paper

Online since:

September 2007

Authors:

Roberta Nipoti

Keywords:

Heating Rate, Ion Implantation, Post-Implantation Annealing

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2007 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

References

[1] H. Hallén, R. Nipoti, S.E. Saddow, S. Rao, and B. G. Svensson: Advances in Silicon Carbide Processing and Applications, S. E. Saddow and A. Agarwal eds. (Artech House, Inc., Norwood, MA, 2004) p.109.

DOI: 10.1186/1475-925x-4-33

Google Scholar

[2] A. Poggi, F. Bergamini, R. Nipoti, M. Canino, S. Solmi and A. Carnera: Appl. Phys. Lett. 88 (2006), p.162106.

DOI: 10.1063/1.2196233

Google Scholar

[3] R. Nipoti, A. Carnera, F. Bergamini, M. Canino, A. Poggi, S. Solmi, and M. Passini: Mater. Res. Soc. Symp. Proc. Vol. 911 (2006), p. B11-01.

DOI: 10.1557/proc-0911-b11-01

Google Scholar

[4] A. Suvorov, J.W. Palmour and R. Singh: Patent No.: US 6, 303, 465 B1 Oct. 16, (2001).

Google Scholar

[5] V. Raineri, L. Calcagno, F. Giannazzo, D. Goghero, F. Musumeci, F. Roccaforte, and F. La Via.: Mat. Sc. Forum 433-436 (2003), p.375.

DOI: 10.4028/www.scientific.net/msf.433-436.375

Google Scholar

[6] J.A. Gardner, M.V. Rao, Y.L. Tian, O.W. Holland, E.G. Roth, P.H. Chi, I. Ahmad: J. Electr. Mat. 26 (1997), p.144.

Google Scholar

[7] JIPELEC furnace for SiC.

Google Scholar

[8] Akimasa Kinoshita, : Mat. Sc. Forum 527-529 (2006), p.803.

Google Scholar

[9] H. Nakamura, H. Watanabe, J. Yamazaki, et al.: Mat. Sc. Forum 389-393 (2002), p.807.

Google Scholar

[10] M. Rambach, F. Schmid, M. Krieger, L. Frey, A.J. Bauer, G. Pensl, and H. Ryssel : Nucl. Instr. Meth. in Phys. Res. B 237 (2005), p.68.

Google Scholar

[11] M. Shibagaki, A. Egami, A. Kumagai, K. Numajiri, F. Watanabe, S. Haga, K. Miura, S. Miyagawa, T. Kudoh, T. Suzuki, and M. Satoh: Mat. Res. Soc. Symp. Proc. 911 (2006), p. B10-1.

DOI: 10.1557/proc-0911-b11-02

Google Scholar

[12] Y. Negoro, T. Kimoto and H. Matsunami: J. Appl. Phys. 98 (2005), p.43709.

Google Scholar

[13] C. Dutto, E. Fogarassy, D. Mathiot, D. Muller, et al.: Appl. Surf. Sc. 208-209 (2003), p.292.

Google Scholar

[14] Y. Tanaka, H. Tanoue and K. Arai: J. Appl. Phys. 93 (2003), p.5934.

Google Scholar

[15] H. Wirth, D. Pankin, W. Skorupa and E. Niemann: Appl. Phys. Lett. 74 (1999), p.979.

Google Scholar

[16] K. Abe, O. Eryu, O. Kogi, and K. Nakashima: Nucl. Instr. Meth. in Phys. Res. B 206 (2003), p.960.

Google Scholar

[17] J. Pezoldt, A.A. Kalnin, et al.: Nucl. Instr. and Meth. in Phys. Res. B 80/81 (1993), p.943.

Google Scholar

[18] S.F. Avramenko, V.S. Kiselev, B.N. Romanyuk, et al.: Semiconductor Physics, Quantum Electronics & Optoelectronics, 4 (2001), p.249.

Google Scholar

[19] S. Blanqué, R. Pérez, N. Mestres, S. Contreras, J. Camassel, and P. Godignon: Mat. Sc. Forum 527-529 (2006), p.795.

DOI: 10.4028/www.scientific.net/msf.527-529.795

Google Scholar

[20] V. Heera, A. Mԇcklich, C. Dubois, M. Voelskow et al: J. Appl. Phys. 96 (2004), p.2841.

Google Scholar

[21] R. Nipoti, F. Bergamini, F. Moscatelli, A. Poggi, M. Canino, and G. Bertuccio: Mat. Sc. Forum 527-529 (2006), p.815.

DOI: 10.4028/www.scientific.net/msf.527-529.815

Google Scholar

[22] R. Nipoti, A. Carnera and G. Mattei: Mat. Res. Soc. Symp. Proc. 640 (2001), p. H5. 28.

Google Scholar

[23] SiC materials purchased from CREE Research, Inc.

Google Scholar

[24] E.M. Handy, M.V. Rao et al.: J. Electronic Mat. 29 (2000), p.1340.

Google Scholar

[25] V. Heera, K.N. Madhusoodanan, W. Skorupa, et al.: J. Appl. Phys. 99 (2006), p.123716.

Google Scholar

[26] W. Bahng, G.H. Song, N.K. Kim, K.S. Seo, H.W. Kima, and E.D. Kim: Mat. Sc. Forum 433- 436 (2003), p.617.

Google Scholar

[27] M. Canino, F. Giannazzo, F. Roccaforte, A. Poggi, S. Solmi, V. Raineri, and R. Nipoti: Mat. Sc. Forum (Proceedings ECSCRM2006, Newcastle upon Tyne, September 3-7, 2006).

Google Scholar

[28] I. -T. Bae, M. Ishimaru, Y. Hirotsu, K.E. Sickafus, et al.: J. Appl. Phys. 96 (2004), p.1451.

Google Scholar

[29] L. Ottaviani, M. Lazar, M.L. Locatelli et al.: Mat. Sc. Engin. B91-92 (2002), p.325.

Google Scholar

[30] M. Lazar, C. Raynaud, D. Planson, J.P. Chante, et al.: J. Appl. Phys. 94 (2003), p.2992.

Google Scholar