Analysis of the Electrical Activation of P+ Implanted Layers as a Function of the Heating Rate of the Annealing Process

Mariaconcetta Canino; Filippo Giannazzo; Fabrizio Roccaforte; Antonella Poggi; Sandro Solmi; Vito Raineri; Roberta Nipoti

doi:10.4028/www.scientific.net/MSF.556-557.571

Paper Titles

XPS Study of the Electronic Properties of the Ce/4H-SiC Interface, and the Formation of the SiO₂/Ce₂Si₂O₇/4H-SiC Interface Structure upon Oxidation
p.549

Control of the Flatband Voltage of 4H-SiC Metal-Oxide Semiconductor (MOS) Capacitors by Co-Implantation of Nitrogen and Aluminum
p.555

Post-Implantation Annealing of SiC: Relevance of the Heating Rate
p.561

Achieving Low Sheet Resistance from Implanted P-Type Layers in 4H-SiC Using High Temperature Graphite Capped Annealing
p.567

Analysis of the Electrical Activation of P⁺ Implanted Layers as a Function of the Heating Rate of the Annealing Process
p.571

Comparison of Graphite and BN/AlN Annealing Caps for Ion Implanted SiC
p.575

Electrical Properties of N Ion Implanted Layer in 3C-SiC(100) Grown on Self-Standing 3C-SiC Substrate
p.579

Encapsulating Annealing of N⁺ Implanted 4H-SiC by Diamond-Like-Carbon Film
p.583

High Temperature Implantation of Aluminum in 4H Silicon Carbide
p.587

HomeMaterials Science ForumMaterials Science Forum Vols. 556-557Analysis of the Electrical Activation of P+...

Analysis of the Electrical Activation of P⁺ Implanted Layers as a Function of the Heating Rate of the Annealing Process

Abstract:

The surface morphology and the electrical activation of P+ implanted 4H-SiC were investigated with respect to annealing treatments that differ only for the heating rate. P+ implantation was carried out in lightly doped n-type epitaxial layers. The implantation temperature was 300 °C. The computed P profile was 250 nm thick with a concentration of 1×1020 cm-3. Two samples underwent annealing at 1400 °C in argon with different constant ramp up rates equal to 0.05° C/s and 40 °C/s. A third sample underwent an incoherent light Rapid Thermal Annealing (RTA) at 1100 °C in argon before the annealing at 1400 °C with the lower ramp rate. The ramp up of the RTA process is a few hundred degrees per second. Atomic Force Microscopy (AFM) micrographs pointed out that the surface roughness of the samples annealed at 1400 °C increases with increasing heating rate and that the critical temperature for surface roughening is above 1100 °C. Independently on the annealing cycle, Scanning Capacitance Microscopy (SCM) measurements showed that the P profiles are uniform over the implantation thickness and have plateau concentration around 9×1018 cm-3 in all the implanted samples. The fraction of P atoms activated as donors is 13% of the total implanted fluence.