Paper Titles
Encapsulating Annealing of N+ Implanted 4H-SiC by Diamond-Like-Carbon Film
p.583
High Temperature Implantation of Aluminum in 4H Silicon Carbide
p.587
Isochronal Annealing Study of Deep Levels in Hydrogen Implanted p-Type 4H-SiC
p.591
Modification of Surface Layer during High Temperature Annealing and its Effects on the SiC Diode Characteristics
p.595
Peculiarities of Neutron-Transmutation Phosphorous Doping of SiC Enriched with 30Si Isotope: Electron Paramagnetic Resonance Study
p.599
Reduction of Traps and Improvement of Carrier Lifetime in SiC Epilayer by Ion Implantation
p.603
Selenium and Tellurium Double Donors in SiC
p.607
Use of Graphite Cap to Reduce Unwanted Post-Implantation Annealing Effects in SiC
p.611
Dynamical Simulation of SiO2/4H-SiC(0001) Interface Oxidation Process: from First-Principles
p.615

Peculiarities of Neutron-Transmutation Phosphorous Doping of SiC Enriched with 30Si Isotope: Electron Paramagnetic Resonance Study

Article Preview

Abstract:

High concentration of two types of P donors up to 1017 cm-3 in SiC enriched with 30Si after neutron transmutation doping (NTD) has been achieved. It was established that annealing at sufficiently low temperature of 1300oC, that is 500-600°C lower compared with annealing of NTD SiC with natural isotope composition, gives rise to the EPR signal of shallow P donors, labeled sPc1, sPc2 and sPh. The correlated changes of the EPR spectra of the three sP centres in all the experiments and the qualitative similarities with spectra of shallow N donors prove that these centres have shallow donor levels and a similar electronic structure and belong to different lattice sites. The annealing at 1700°C results in a transformation of one type of P donors (sPc1, sPc2 and sPh) into another type having low temperature EPR spectra labeled dP.

You might also be interested in these eBooks
Silicon Carbide and Related Materials 2006 View Preview

Info:

Periodical:

Materials Science Forum (Volumes 556-557)

Pages:

599-602

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.556-557.599

Citation:

Cite this paper

Online since:

September 2007

Authors:

Ivan V. Ilyin, Marina V. Muzafarova, P.G. Baranov, B.Ya. Ber, A.N. Ionov, E.N. Mokhov, Pavel A. Ivanov, M.A. Kaliteevskii, P.S. Kop'ev

Keywords:

Defect Level, Electron Paramagnetic Relaxation, Electron Paramagnetic Resonance (EPR), Impurity Levels, Other Impurities, Other Ions

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2007 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

References

[1] J. M. Meese: Neutron Transmutation Doping in Semiconductors (Plenum, New York, 1979).

Google Scholar

[2] G. D. Watkins: in Point defects in Solids (Plenum, New York, 1975), Vol. 2, p.333.

Google Scholar

[3] Yu.A. Vodakov, E.N. Mokhov, G. Ramm, and A.D. Roenkov: Krist. Tech Vol. 14 (1979), p.729.

Google Scholar

[4] T. Troffer et al.: J. Appl. Phys. Vol. 80 (1996), p.3739.

Google Scholar

[5] A. I. Veinger et al.: Sov. Phys. Solid State Vol. 28 (1986), p.917.

Google Scholar

[6] E. N. Kalabukhova, S. N. Lukin, and E. N. Mokhov: Phys. Solid State Vol. 35 (1993), p.361.

Google Scholar

[7] S. Greulich-Weber et al.: Solid State Commun. Vol. 93 (1995), p.393.

Google Scholar

[8] P. G. Baranov et al.: Phys. Rev. B Vol. 66 (2002), p.165206.

Google Scholar

[9] J. Isoya et al.: Physica B Vol. 340-342 (2003), p.903.

Google Scholar

[10] N. T. Son et al.: Phys. Rev. B Vol. 73 (2006), p.075201.

Google Scholar

[11] I. V. Ilyin et al.: Mater. Sci. Forum Vol. 483-485 (2005), p.489.

Google Scholar

[12] E. Rauls et al.: Phys. Rev. B Vol. 70 (2004), p.085202.

Google Scholar