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Reduction of Traps and Improvement of Carrier Lifetime in SiC Epilayer by Ion Implantation

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Abstract:

Reduction in deep level defects and increase of carrier lifetime in 4H-SiC epilayer was observed after carbon ion implantation into the shallow surface layer of 250 nm and subsequent annealing above 1400 °C. The concentration of Z1/2 and EH6/7 traps was determined by deep level transient spectroscopy 4 μm below the implanted layer. After annealing, concentration of both traps decreased from 1013 cm-3 range to below the detection limit. Minority carrier lifetime almost doubled in the implanted samples compared to the unimplanted samples. We suggest that carbon interstitials from the implanted layer in-diffuse into the layer underneath during annealing and annihilate with carbon vacancies. Our results indicate that Z1/2 and EH6/7 traps are most likely carbon vacancy related.

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Silicon Carbide and Related Materials 2006 View Preview

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Periodical:

Materials Science Forum (Volumes 556-557)

Pages:

603-606

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.556-557.603

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Online since:

September 2007

Authors:

L. Storasta, Hidekazu Tsuchida

Keywords:

Annealing, Carbon Interstitial, Carbon Vacancy, Carrier Lifetime, DLTS, Intrinsic Defect, Ion Implantation

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© 2007 Trans Tech Publications Ltd. All Rights Reserved

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