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Epitaxial Growth of 4H-SiC on (000-1) C-Face Substrates by Cold-Wall and Hot-Wall Chemical Vapor Deposition

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Abstract:

Epitaxial layers have been grown on the (0001) C-face of 2- and 3-inch 4H-SiC wafers. Growth conditions like temperature, pressure, and C/Si ratio have been varied. In both systems smooth surface morphologies could be obtained. The main challenge of epitaxial growth on the Cface of 4H-SiC for electronic device applications seems to be the control of low doping concentration. High temperature and low pressure are the key parameters to reduce the nitrogen incorporation. The hot-wall CVD system used for these experiments allowed the application of higher temperatures and lower pressures than the cold-wall equipment. The lowest doping concentration of 2.5x1015 cm-3 has been achieved by hot-wall epitaxy using a temperature of 1625 °C, a system pressure of 50 hPa, a C/Si ratio of 1.4, and a growth rate of 6.5 2mh-1. Good doping homogeneity on 2-inch and 3-inch wafers could be achieved. For a doping level of ND-NA= 3×1015 cm-3 sigma is about 15%.

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Periodical:

Materials Science Forum (Volumes 556-557)

Pages:

89-92

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.556-557.89

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Online since:

September 2007

Authors:

René A. Stein, Bernd Thomas, Christian Hecht

Keywords:

C/Si Ratio, C-Face, Chemical Vapor Deposition (CVD), Cold-Wall, Doping, Epitaxy, Hot-Wall CVD, Low Pressure

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© 2007 Trans Tech Publications Ltd. All Rights Reserved

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