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Microwave p-i-n Diodes and Switches Based on 4H-SiC
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New Diode Designs Compatible with Vertical 4H-SiC JFET Fabrication Process
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Microwave p-i-n Diodes and Switches Based on 4H-SiC

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Abstract:

4H-SiC p-i-n diodes were designed, fabricated and characterized for use in microwave applications. The diodes exhibited a blocking voltage of 1100 V, a 100 mA differential resistance of 1-3 &, a capacitance below 0.5 pF at a punchthrough voltage of 100 V and a carrier effective lifetime between 15-27 ns. Single 4H-SiC p-i-n diode switches, operating in X-band, exhibited insertion loss 0.7 dB, isolation up to 25 dB and were able to handle microwave power up to 2.2 kW in pulsed mode of operation. The switching speed of the switches has not exceeded 20 ns.

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Periodical:

Materials Science Forum (Volumes 556-557)

Pages:

999-1002

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.556-557.999

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Online since:

September 2007

Authors:

Konstantinos Zekentes, Nicolas Camara, L.P. Romanov, A.V. Kirillov, Mykola S. Boltovets

Keywords:

Insertion Loss, Isolation, Microwave Switches, PiN Diode

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© 2007 Trans Tech Publications Ltd. All Rights Reserved

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References

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