Selfconsistent Tight Binding Theory of Trends for Substitutional Transition Metal Ions in Si and GaAs
p.37
p.37
Tight-Binding Study of the Silicon Divacancy
p.43
p.43
Electronic Structure of Cationic Substitutional Cu, Ag, Au, and the Metal Vacancy in ZnS, ZnSe and CdTe
p.49
p.49
Theoretical Model of Transition Metal-Shallow Acceptor Impurity Pairs in Silicon
p.55
p.55
Calculation of the Spin-Polarized Electronic Structure of Si: Feoi in Super-Cell Full-Potential Linearized Augumented Plane Wave Method
p.61
p.61
Tight Binding Calculations of Optical Cross Sections for Deep Level Defects in Semiconductors
p.67
p.67
Accurate Prediction of Lattice Distortion for Complex Defects in Semiconductors: Extended Interstitials as Tests of Valence Force Potentials
p.73
p.73
Effects of Doping and Alloying on Native Defects and Complex Formation in Hg1-x CdxTe
p.79
p.79
The Electronic States of a Substitutional Ytterbium Impurity in Indium Phosphide
p.85
p.85
Calculation of the Spin-Polarized Electronic Structure of Si: Feoi in Super-Cell Full-Potential Linearized Augumented Plane Wave Method
Abstract:
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Periodical:
Materials Science Forum (Volumes 10-12)
Pages:
61-66
DOI:
Citation:
Online since:
January 1986
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© 1986 Trans Tech Publications Ltd. All Rights Reserved
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